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  • CVD SiC Coated Wafer Barrel Holder

    CVD SiC Coated Wafer Barrel Holder

    CVD SiC coated wafer Barrel holder is the key component of epitaxial growth furnace, widely used in MOCVD epitaxial growth furnaces. VeTek Semiconductor provides you with highly customized products. No matter what your needs are for CVD SiC coated wafer Barrel holder, Welcome to consult us.
  • LPE Halfmoon SiC EPI Reactor

    LPE Halfmoon SiC EPI Reactor

    VeTek Semiconductor is a professional LPE Halfmoon SiC EPI Reactor product manufacturer, innovator and leader in China. LPE Halfmoon SiC EPI Reactor is a device specifically designed for producing high-quality silicon carbide (SiC) epitaxial layers, mainly used in the semiconductor industry. VeTek Semiconductor is committed to providing leading technology and product solutions for the semiconductor industry, and welcomes your further inquiries.
  • Upper Halfmoon Part SiC Coated

    Upper Halfmoon Part SiC Coated

    VeTek Semiconductor is a leading supplier of customized Upper Halfmoon Part SiC coated in China, specializing in advanced materials for over 20 years. VeTek Semiconductor Upper Halfmoon Part SiC coated is specifically designed for SiC epitaxial equipment, serving as a crucial component in the reaction chamber. Made from ultra-pure, semiconductor-grade graphite, it ensures excellent performance. We invite you to visit our factory in China.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    VeTek Semiconductor is a leading manufacturer and innovator of CVD SiC Coated Barrel Susceptor in China. Our CVD SiC Coated Barrel Susceptor plays a key role in promoting the epitaxial growth of semiconductor materials on wafers with its excellent product characteristics. Welcome to your further consultation.
  • CVD SiC Coating Nozzle

    CVD SiC Coating Nozzle

    Vetek Semiconductor’s CVD SiC Coating Nozzles are crucial components used in the LPE SiC epitaxy process for depositing silicon carbide materials during semiconductor manufacturing. These nozzles are typically made of high-temperature and chemically stable silicon carbide material to ensure stability in harsh processing environments. Designed for uniform deposition, they play a key role in controlling the quality and uniformity of epitaxial layers grown in semiconductor applications.Looking forward to setting up long term cooperation with you.
  • Ultra Pure Silicon Carbide Powder for Crystal Growth

    Ultra Pure Silicon Carbide Powder for Crystal Growth

    VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Ultra Pure Silicon Carbide Powder for Crystal Growth. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide. Welcome to inquire and cooperate with us!
  • Related Blog
  • Reviews

  • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

    VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

  • A complete explanation of the chip manufacturing process (1/2): from wafer to packaging and testing

    The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.

  • Based on 8-inch silicon carbide single crystal growth furnace technology

    Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

  • Silicon(Si) epitaxy preparation technology

    Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

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