China UV LED Susceptor Manufacturer, Supplier, Factory

VeTek Semiconductor is a manufacturer specializing in UV LED Susceptors, has many years of research and development and production experience in LED EPI susceptors, and has been recognized by many customers in the industry.

LED, that is, semiconductor light-emitting diode, the physical nature of its luminescence is that after the semiconductor pn junction is energized, under the drive of electric potential, electrons and holes in the semiconductor material are combined to generate photons, so as to achieve semiconductor luminescence. Therefore, epitaxial technology is one of the foundations and core of LED, and it is also the main decisive factor for the electrical and optical characteristics of LED.

Epitaxy (EPI) technology refers to the growth of a single crystal material on a single crystal substrate with the same lattice arrangement as the substrate. Basic principle: On a substrate heated to the appropriate temperature (mainly sapphire substrate, SiC substrate and Si substrate), the gaseous substances indium (In), gallium (Ga), aluminum (Al), phosphorus (P) are controlled to the surface of the substrate to grow a specific single crystal film. At present, the growth technology of LED epitaxial sheet mainly uses the method MOCVD (organic metal chemical meteorological deposition).

LED epitaxial substrate material

1. Red and yellow LED:

GaP and GaAs are commonly used substrates for red and yellow LEDs. GaP substrates are used in liquid phase epitaxy (LPE) method, resulting in a wide wavelength range of 565-700 nm. For gas phase epitaxy (VPE) method, GaAsP epitaxial layers are grown, yielding wavelengths between 630-650 nm. When using MOCVD, GaAs substrates are typically employed with the growth of AlInGaP epitaxial structures. This helps overcome the light absorption drawbacks of GaAs substrates, although it introduces lattice mismatch, requiring buffer layers for growing InGaP and AlGaInP structures.

VeTek Semiconductor provide LED EPI susceptor with SiC coating,TaC coating:

VEECO Red and Yellow LED EPI Susceptor TaC coating used in LED EPI susceptor

2. blue and green LED:

GaN Substrate: GaN single crystal is the ideal substrate for GaN growth, improving crystal quality, chip lifespan, luminous efficiency, and current density. However, its difficult preparation limits its application.

Sapphire Substrate: Sapphire (Al2O3) is the most common substrate for GaN growth, offering good chemical stability and no visible light absorption. However, it faces challenges with insufficient thermal conductivity in high current operation of power chips.

SiC Substrate: SiC is another substrate used for GaN growth, ranking second in market share. It provides good chemical stability, electrical conductivity, thermal conductivity, and no visible light absorption. However, it has higher prices and lower quality compared to sapphire. SiC is not suitable for UV LEDs below 380 nm. The excellent electrical and thermal conductivity of SiC eliminates the need for flip-chip bonding for heat dissipation in power-type GaN LEDs on sapphire substrates. The upper and lower electrode structure is effective for heat dissipation in power-type GaN LED devices.

AMEC blue and green LED EPI susceptor MOCVD Susceptor with TaC Coating

3. Deep UV LED EPI:

In deep ultraviolet (DUV) LED epitaxy, deep UV LED or DUV LED Epitaxy, commonly used chemical materials as substrates include aluminum nitride (AlN), silicon carbide (SiC), and gallium nitride (GaN). These materials possess good thermal conductivity, electrical insulation, and crystal quality, making them suitable for DUV LED applications in high-power and high-temperature environments. The choice of substrate material depends on factors such as application requirements, fabrication processes, and cost considerations.

SiC Coated Deep UV LED Susceptor TaC Coated Deep UV LED Susceptor