Ultra Pure Silicon Carbide Powder for Crystal Growth

As the professional manufacturer, VeTek Semiconductor would like to provide you high quality Ultra Pure Silicon Carbide Powder for Crystal Growth.

VeTek Semiconductor specializes in providing Ultra Pure Silicon Carbide Powder for Crystal Growth with varying levels of purity. Contact us today to learn more and receive a quotation. Elevate your semiconductor research and development with VeTek Semiconductor's high-quality products.

VeTek Semiconductor Ultra Pure Silicon Carbide Powder for Crystal Growth is prepared using a high-temperature solid-phase reaction method, utilizing high-purity silicon powder and high-purity carbon powder as raw materials. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide.

The purity of our semiconductor-grade silicon carbide powder reaches an impressive 99.999%, making it an excellent raw material for the production of silicon carbide single crystals. What sets our product apart from others in the market is its remarkable feature of high-speed crystal growth. With crystal growth rates reaching 0.2-0.3 mm/h, it significantly reduces the crystal growth time and lowers the overall production costs.

The quality of silicon carbide powder is crucial for achieving high crystal growth yield and requires precise manufacturing processes. Our technology involves thermal separation at different stages to remove impurities of varying properties, resulting in high-purity semi-insulating silicon carbide powder with low nitrogen content. By further processing the powder into granules and utilizing thermal cycling techniques, we meet the dimensional growth requirements of silicon carbide crystals. This technology aims to enhance domestic advanced semiconductor research capabilities, improve material self-sufficiency, address international monopolies, and reduce manufacturing costs in the domestic silicon carbide semiconductor industry, ultimately elevating its global competitiveness.

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