CVD SiC coated wafer Barrel holder is the key component of epitaxial growth furnace, widely used in MOCVD epitaxial growth furnaces. VeTek Semiconductor provides you with highly customized products. No matter what your needs are for CVD SiC coated wafer Barrel holder, Welcome to consult us.
Metal organic chemical vapor deposition (MOCVD) is the hottest epitaxial growth technology at present, which is widely used in the manufacture of semiconductor lasers and LEDs, especially GaN epitaxy. Epitaxy refers to the growth of another single crystal film on a crystal substrate. Epitaxy technology can ensure that the newly grown crystal film is structurally aligned with the underlying crystal substrate. This technology allows the growth of films with specific properties on the substrate, which is essential for the manufacture of high-performance semiconductor devices.
Wafer Barrel holder is a key component of epitaxial growth furnace. CVD SiC coating wafer holder is widely used in various CVD epitaxial growth furnaces, especially MOCVD epitaxial growth furnaces.
● Carrying and heating substrates: CVD SiC Coated Barrel Susceptor is used to carry substrates and provide necessary heating during the MOCVD process. CVD SiC coated wafer Barrel holder is composed of high-purity graphite and SiC coating, and has excellent performance.
● Uniformity: During the MOCVD process, the Graphite Barrel holder rotates continuously to achieve uniform growth of the epitaxial layer.
● Thermal stability and thermal uniformity: The SiC coating of the SiC Coated Barrel Susceptor has excellent thermal stability and thermal uniformity, thereby ensuring the quality of the epitaxial layer.
● Avoid contamination: The CVD SiC coated wafer Barrel holder has superb stability, so that it will not produce contaminants falling off during operation.
● Ultra-long service life: Due to the SiC coating, the CVD SiC Coated Barrel Susceptor still has sufficient durability in the high temperature and corrosive gas environment of MOCVD.
Schematic of the Barrel CVD reactor
● The highest degree of customization: The material composition of the graphite substrate, the material composition and thickness of the SiC coating, and the structure of the wafer holder can all be customized according to customer needs.
● Being ahead of other suppliers: VeTek Semiconductor's SiC Coated Graphite Barrel Susceptor for EPI can also be customized according to customer needs. On the inner wall, we can make complex patterns to respond to customer needs.
Since its inception, VeTek Semiconductor has been committed to the continuous exploration of SiC coating technology. Today, VeTek Semiconductor has the industry's leading SiC coating product strength. VeTek Semiconductor looks forward to becoming your partner in CVD SiC coated wafer Barrel holder products.
Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) oriented
Density
3.21 g/cm³
Hardness
2500 Vickers hardness(500g load)
Grain SiZe
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus
430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1