The role of Silicon Carbide (SiC) Cantilever Paddle in the semiconductor industry is to support and transport wafers. In high-temperature processes such as diffusion and oxidation, SiC cantilever paddle can stably carry wafer boats and wafers without deformation or damage due to high temperature, ensuring the smooth progress of the process. Making diffusion, oxidation and other processes more uniform is crucial to improving the consistency and yield of wafer processing. VeTek Semiconductor uses advanced technology to build SiC cantilever paddle with high-purity silicon carbide to ensure that wafers will not be contaminated. VeTek Semiconductor looks forward to long-term cooperation with you on Silicon Carbide (SiC) Cantilever Paddle products.
Silicon Carbide (SiC) Cantilever Paddle is an indispensable key component in the wafer processing process. It is mainly a part of the wafer transport system. It undertakes the important task of carrying and transporting wafers in equipment such as high-temperature oxidation diffusion furnaces, ensuring the concentricity of the wafer and the furnace tube, and improving the consistency and yield of wafer processing.
SiC cantilever paddle has excellent high temperature performance: in high temperature environment up to 1600℃, SiC cantilever paddle can still maintain high strength and stability, will not deform, damage and other problems, and can work stably for a long time.
Silicon Carbide cantilever paddle is made of high-purity SiC material, and no particles will fall off during wafer processing, avoiding contamination of the wafer surface. Silicon Carbide material has high bending strength, and can withstand greater stress when carrying more wafers, and is not prone to breakage, ensuring the safety and stability of the wafer transmission process. The excellent chemical stability of SiC helps SiC cantilever paddle resist corrosion from various chemicals and gases, prevents impurities from contaminating the wafer due to material corrosion, and extends the service life of the product.
SiC Cantilever Paddle working diagram
● Various sizes: We provide Silicon Carbide (SiC) Cantilever paddles of various sizes to meet the needs of different types of semiconductor equipment and wafer processing of different sizes.
● Customized service: In addition to standard specification products, we can also create exclusive solutions for customers according to their special requirements, such as specific size, shape, load capacity, etc.
● One-piece molding design: It is usually manufactured using an one-piece molding process, including the connecting section, transition section and bearing section. The parts are tightly connected and have strong integrity, which effectively improves the structural strength and stability of the product and reduces the risk of failure caused by weak connection parts.
● Reinforced structure: Some products are equipped with reinforcement structures in key parts such as the transition section, such as the bottom plate, pressure plate, connecting rod, etc., which further enhances the connection strength between the transition section and the connecting section and the bearing section, improves the reliability of the High Purity SiC Cantilever Paddle when carrying the wafer, and prevents problems such as fracture in the transition area.
● Special bearing area design: The design of the bearing area fully considers the placement and heat transfer of the wafer. Some products are equipped with U-shaped grooves, long strip holes, rectangular holes and other structures in the bearing area, which not only reduces the weight of the bearing area itself, but also reduces the contact area with the wafer to avoid blocking heat. At the same time, it can also ensure the stability of the wafer during transmission and prevent the wafer from falling.
Property |
Typical Value |
Working temperature (°C) |
1600°C (with oxygen), 1700°C (reducing environment) |
SiC content |
> 99.96% |
Free Si content |
< 0.1% |
Bulk density |
2.60-2.70 g/cm3 |
Apparent porosity |
< 16% |
Apparent porosity |
> 600 MPa |
Cold bending strength |
80-90 MPa (20°C) |
Hot bending strength |
90-100 MPa (1400°C) |
Thermal expansion @1500°C |
4.70 10-6/°C |
Thermal conductivity @1200°C |
23 W/m•K |
Elastic modulus |
240 GPa |
Thermal shock resistance |
Extremely good |
During the production process, each Silicon Carbide (SiC) Cantilever Paddle must undergo strict quality inspections, including dimensional accuracy inspection, appearance inspection, physical property testing, chemical stability testing, etc., to ensure that the product meets high quality standards and can meet the strict requirements of semiconductor wafer processing.
VeTek Semiconductor provides a full range of after-sales services. If customers encounter any problems during use, the professional after-sales team will respond in a timely manner and provide customers with fast and effective solutions to ensure that customers' production is not affected.