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TaC Coated Graphite Susceptor
  • TaC Coated Graphite SusceptorTaC Coated Graphite Susceptor

TaC Coated Graphite Susceptor

VeTek Semiconductor’s TaC Coated Graphite Susceptor uses chemical vapor deposition(CVD) method to prepare tantalum carbide coating on the surface of graphite parts. This process is the most mature and has the best coating properties. TaC Coated Graphite Susceptor can extend the service life of graphite components, inhibit the migration of graphite impurities, and ensure the quality of epitaxy. VeTek Semiconductor is looking forward to your inquiry.

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Product Description

You are welcomed to come to our factory VeTek Semiconductor to buy the latest selling, low price, and high-quality TaC Coated Graphite Susceptor. We look forward to cooperating with you.

Tantalum carbide ceramic material melting point up to 3880℃, is a high melting point and good chemical stability of the compound, its high temperature environment can still maintain stable performance, in addition, it also has high temperature resistance, chemical corrosion resistance, good chemical and mechanical compatibility with carbon materials and other characteristics, making it an ideal graphite substrate protective coating material. The tantalum carbide coating can effectively protect the graphite components from the influence of hot ammonia, hydrogen and silicon vapor and molten metal in the harsh use environment, significantly extend the service life of the graphite components, and inhibit the migration of impurities in the graphite, ensuring the quality of epitaxy and crystal growth.It's mainly used in wet ceramic process.

Chemical vapor deposition (CVD) is the most mature and optimal preparation method for tantalum carbide coating on the surface of graphite.


CVD TaC Coating Method for TaC Coated Graphite Susceptor:

The coating process uses TaCl5 and propylene as carbon source and tantalum source respectively, and argon as carrier gas to bring tantalum pentachloride vapor into the reaction chamber after high temperature gasification. Under the target temperature and pressure, the vapor of the precursor material is adsorbed on the surface of the graphite part, and a series of complex chemical reactions such as decomposition and combination of carbon source and tantalum source occur. At the same time, a series of surface reactions such as diffusion of the precursor and desorption of by-products are also involved. Finally, a dense protective layer is formed on the surface of the graphite part, which protects the graphite part from being stable under extreme environmental conditions. The application scenarios of graphite materials are significantly expanded.


Product parameter of the TaC Coated Graphite Susceptor:

Physical properties of TaC coating
Density 14.3 (g/cm³)
Specific emissivity 0.3
Thermal expansion coefficient 6.3 10-6/K
Hardness (HK) 2000 HK
Resistance 1×10-5 Ohm*cm
Thermal stability <2500℃
Graphite size changes -10~-20um
Coating thickness ≥20um typical value (35um±10um)


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Overview of the semiconductor chip epitaxy industry chain:


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