CVD SiC Coated Barrel Susceptor

VeTek semiconductor CVD SiC Coated Barrel Susceptor is tailored for epitaxial processes in semiconductor manufacturing and is an ideal choice for improving product quality and yield. This SiC Coating Barrel Susceptor base adopts a solid graphite structure and is precisely coated with a SiC layer by CVD process, which makes it have excellent thermal conductivity, corrosion resistance and high temperature resistance, and can effectively cope with the harsh environment during epitaxial growth.

Why choose VeTek semiconductor CVD SiC Coated Barrel Susceptor?

● Uniform heating to ensure the quality of epitaxial layer: The excellent thermal conductivity of SiC coating ensures uniform temperature distribution on the surface of the wafer, effectively reducing defects and improving product yield.

● Extend the service life of the base: The SiC coating has excellent corrosion resistance and high temperature resistance, which can effectively extend the service life of the base and reduce production costs.

● Improve production efficiency: The barrel design optimizes the wafer loading and unloading process and improves production efficiency.

● Applicable to a variety of semiconductor materials: This base can be widely used in the epitaxial growth of a variety of semiconductor materials such as SiC and GaN.

Advantages of CVD SiC Coated Barrel Susceptor:

 ● Excellent thermal performance: High thermal conductivity and thermal stability ensure the temperature control accuracy during epitaxial growth.

 ● Corrosion resistance: SiC coating can effectively resist the erosion of high temperature and corrosive gas, extending the service life of the base.

 ● High strength: The graphite base provides solid support to ensure the stability of the epitaxial process.

 ● Customized service: VeTek semiconductor can provide customized services according to customer needs to meet different process requirements.

SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating: