CVD SiC Coated Barrel Susceptor

VeTek Semiconductor is a leading manufacturer and innovator of CVD SiC Coated Barrel Susceptor in China. Our CVD SiC Coated Barrel Susceptor plays a key role in promoting the epitaxial growth of semiconductor materials on wafers with its excellent product characteristics. Welcome to your further consultation.

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Product Description

VeTek semiconductor CVD SiC Coated Barrel Susceptor is tailored for epitaxial processes in semiconductor manufacturing and is an ideal choice for improving product quality and yield. This SiC Coating Barrel Susceptor base adopts a solid graphite structure and is precisely coated with a SiC layer by CVD process, which makes it have excellent thermal conductivity, corrosion resistance and high temperature resistance, and can effectively cope with the harsh environment during epitaxial growth.

Why choose VeTek semiconductor CVD SiC Coated Barrel Susceptor?

● Uniform heating to ensure the quality of epitaxial layer: The excellent thermal conductivity of SiC coating ensures uniform temperature distribution on the surface of the wafer, effectively reducing defects and improving product yield.

● Extend the service life of the base: The SiC coating has excellent corrosion resistance and high temperature resistance, which can effectively extend the service life of the base and reduce production costs.

● Improve production efficiency: The barrel design optimizes the wafer loading and unloading process and improves production efficiency.

● Applicable to a variety of semiconductor materials: This base can be widely used in the epitaxial growth of a variety of semiconductor materials such as SiC and GaN.

Advantages of CVD SiC Coated Barrel Susceptor:

● Excellent thermal performance: High thermal conductivity and thermal stability ensure the temperature control accuracy during epitaxial growth.

● Corrosion resistance: SiC coating can effectively resist the erosion of high temperature and corrosive gas, extending the service life of the base.

● High strength: The graphite base provides solid support to ensure the stability of the epitaxial process.

● Customized service: VeTek semiconductor can provide customized services according to customer needs to meet different process requirements.

SEM DATA OF CVD SIC COATING FILM CRYSTAL STRUCTURE:

CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1