Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

With the gradual mass production of conductive SiC substrates, higher requirements are placed on the stability and repeatability of the process. In particular, the control of defects, slight adjustments or drifts in the thermal field in the furnace will lead to changes in the crystal or an increase in defects.

In the later stage, we will face the challenge of "growing faster, thicker, and longer". In addition to the improvement of theory and engineering, more advanced thermal field materials are needed as support. Use advanced materials to grow advanced crystals.

Improper use of materials such as graphite, porous graphite, and tantalum carbide powder in the crucible in the thermal field will lead to defects such as increased carbon inclusions. In addition, in some applications, the permeability of porous graphite is not enough, and additional holes need to be opened to increase the permeability. Porous graphite with high permeability faces challenges such as processing, powder loss, and etching.

Recently, VeTek Semiconductor launched a new generation of SiC crystal growth thermal field materials, porous tantalum carbide, for the first time in the world.

Tantalum carbide has high strength and hardness, and it is even more challenging to make it porous. It is even more challenging to make porous tantalum carbide with large porosity and high purity. VeTek Semiconductor has launched a breakthrough porous tantalum carbide with large porosity, with a maximum porosity of 75%, reaching the international leading level.

In addition, it can be used for gas phase component filtration, adjusting local temperature gradients, guiding material flow direction, controlling leakage, etc.; it can be combined with another solid tantalum carbide (dense) or tantalum carbide coating of VeTek Semiconductor to form components with different local flow conductances; some components can be reused.

Technical parameters

Porosity ≤75% International leading

Shape: flake, cylindrical International leading

Uniform porosity

VeTek semiconductor Porous Tantalum Carbide (TaC) has the following product features

●   Porosity for Versatile Applications

The porous structure of TaC provides multifunctionality, enabling its use in specialized scenarios such as:

Gas diffusion: Facilitates precise gas flow control in semiconductor processes.

Filtration: Ideal for environments requiring high-performance particulate separation.

Controlled heat dissipation: Efficiently manages heat in high-temperature systems, enhancing overall thermal regulation.

●   Extreme High-Temperature Resistance

With a melting point of approximately 3,880°C, Tantalum Carbide excels in ultra-high-temperature applications. This exceptional heat resistance ensures consistent performance in conditions where most materials fail.

●   Superior Hardness and Durability

Ranking 9-10 on the Mohs hardness scale, similar to diamond, Porous TaC demonstrates unparalleled resistance to mechanical wear, even under extreme stress. This durability makes it ideal for applications exposed to abrasive environments.

●   Exceptional Thermal Stability

Tantalum Carbide retains its structural integrity and performance in extreme heat. Its remarkable thermal stability ensures reliable operation in industries requiring high-temperature consistency, such as semiconductor manufacturing and aerospace.

●   Excellent Thermal Conductivity

Despite its porous nature, Porous TaC maintains efficient heat transfer, enabling its use in systems where rapid heat dissipation is critical. This feature enhances the material’s applicability in heat-intensive processes.

●   Low Thermal Expansion for Dimensional Stability

With a low thermal expansion coefficient, Tantalum Carbide resists dimensional changes caused by temperature fluctuations. This property minimizes thermal stress, extending the lifespan of components and maintaining precision in critical systems.

In semiconductor manufacturing, Porous Tantalum Carbide (TaC) plays the following specific key roles

●  In high-temperature processes such as plasma etching and CVD, VeTek semiconductor Porous Tantalum Carbide is often used as a protective coating for processing equipment. This is due to the strong corrosion resistance of TaC Coating and its high-temperature stability. These properties ensure that it effectively protects surfaces exposed to reactive gases or extreme temperatures, thereby ensuring the normal reaction of high-temperature processes.

●  In diffusion processes, Porous Tantalum Carbide can serve as an effective diffusion barrier to prevent the mixing of materials in high-temperature processes. This feature is often used to control the diffusion of dopants in processes such as ion implantation and the purity control of semiconductor wafers.

●  The porous structure of VeTek semiconductor Porous Tantalum Carbide is very suitable for semiconductor processing environments that require precise gas flow control or filtration. In this process, Porous TaC mainly plays the role of gas filtration and distribution. Its chemical inertness ensures that no contaminants are introduced during the filtration process. This effectively guarantees the purity of the processed product.

About VeTek Semiconductor

As a China professional Porous Tantalum Carbide Manufacturer, Supplier, Factory, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Porous Tantalum Carbide made in China, you can leave us a message.

If you have any inquiries or need additional details about Porous Tantalum Carbide、Tantalum Carbide Coated Porous Graphite and other Tantalum Carbide Coated components, please don't hesitate to get in touch with us.

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