LPE Halfmoon SiC EPI Reactor

LPE Halfmoon SiC EPI Reactor is a device specifically designed for producing high-quality silicon carbide (SiC) epitaxial layers, where the epitaxial process occurs in the LPE half-moon reaction chamber, where the substrate is exposed to extreme conditions such as high temperature and corrosive gases. To ensure the service life and performance of the reaction chamber components, chemical vapor deposition (CVD) SiC coating is usually used. Its design and function enable it to provide stable epitaxial growth of SiC crystals under extreme conditions.

LPE Halfmoon SiC EPI Reactor Components:

Main reaction chamber: The main reaction chamber is made of high-temperature resistant materials such as silicon carbide (SiC) and graphite, which have extremely high chemical corrosion resistance and high temperature resistance. The operating temperature is usually between 1,400°C and 1,600°C, which can support the growth of silicon carbide crystals under high temperature conditions. The operating pressure of the main reaction chamber is between 10^-3 and 10^-1 mbar, and the uniformity of epitaxial growth can be controlled by adjusting the pressure.

Heating components: Graphite or silicon carbide (SiC) heaters are generally used, which can provide a stable heat source under high temperature conditions.

The main function of the LPE Halfmoon SiC EPI Reactor is to epitaxially grow high-quality silicon carbide films. Specifically, it is manifested in the following aspects:

Epitaxial layer growth: Through the liquid phase epitaxy process, extremely low-defect epitaxial layers can be grown on SiC substrates, with a growth rate of about 1–10μm/h, which can ensure extremely high crystal quality. At the same time, the gas flow rate in the main reaction chamber is usually controlled at 10–100 sccm (standard cubic centimeters per minute) to ensure the uniformity of the epitaxial layer.

High temperature stability: SiC epitaxial layers can still maintain excellent performance under high temperature, high pressure, and high frequency environments.

Reduce defect density: The unique structural design of LPE Halfmoon SiC EPI Reactor can effectively reduce the generation of crystal defects during the epitaxy process, thereby improving device performance and reliability.

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SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating：

VeTek Semiconductor LPE halfmoon SiC EPI Reactor Production shops: