Upper Halfmoon Part SiC Coated
VeTek Semiconductor is a leading supplier of customized Upper Halfmoon Part SiC coated in China, specializing in advanced materials for over 20 years. VeTek Semiconductor Upper Halfmoon Part SiC coated is specifically designed for SiC epitaxial equipment, serving as a crucial component in the reaction chamber. Made from ultra-pure, semiconductor-grade graphite, it ensures excellent performance. We invite you to visit our factory in China.
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Product Description
As the professional manufacturer, we would like to provide you high quality Upper Halfmoon Part SiC coated.
VeTek Semiconductor Upper Halfmoon Part SiC coated are specifically designed for the SiC epitaxial chamber. They have a wide range of applications and are compatible with various equipment models.
Application Scenario:
At VeTek Semiconductor, we specialize in manufacturing high-quality Upper Halfmoon Part SiC coated. Our SiC and TaC coated products are specifically designed for SiC epitaxial chambers and offer broad compatibility with different equipment models.
VeTek Semiconductor Upper Halfmoon Part SiC coated serves as components in the SiC epitaxial chamber. They ensure controlled temperature conditions and indirect contact with wafers, maintaining impurity content below 5 ppm.
To ensure optimal epitaxial layer quality, we carefully monitor critical parameters such as thickness and doping concentration uniformity. Our assessment includes analyzing film thickness, carrier concentration, uniformity, and surface roughness data to achieve a best product quality.
The VeTek Semiconductor Upper Halfmoon Part SiC coated is compatible with various equipment models, including LPE, NAURA, JSG, CETC, NASO TECH, and more.
Contact us today to explore our high-quality Upper Halfmoon Part SiC coated or schedule a visit to our factory.
Basic physical properties of CVD SiC coating:
| Basic physical properties of CVD SiC coating | |
| Property | Typical Value |
| Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
| Density | 3.21 g/cm³ |
| Hardness | 2500 Vickers hardness（500g load） |
| Grain SiZe | 2~10μm |
| Chemical Purity | 99.99995% |
| Heat Capacity | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700℃ |
| Flexural Strength | 415 MPa RT 4-point |
| Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
| Thermal Conductivity | 300W·m-1·K-1 |
| Thermal Expansion(CTE) | 4.5×10-6K-1 |
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Overview of the semiconductor chip epitaxy industry chain:
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