CVD SiC Coating Nozzle

VeTek Semiconductor is a specialized manufacturer of CVD SiC coating accessories for epitaxial devices like CVD SiC Coating halfmoon parts and its accessory CVD SiC Coating Nozzels.Welcome to inquiry us.

PE1O8 is a fully automatic cartridges to cartridges system designed to handle SiC wafers up to 200mm. The format can be switched between 150 and 200 mm, minimizing tool downtime. The reduction of heating stages increases productivity, while automation reduces labor and improves quality and repeatability. To ensure an efficient and cost-competitive epitaxy process, three main factors are reported: 

●  fast process;

●  high uniformity of thickness and doping;

●  minimization of defect formation during the epitaxy process. 

In the PE1O8, the small graphite mass and automatic load/unload system allow a standard run to be completed in less than 75 minutes (the standard 10μm Schottky diode formulation uses a 30μm/h growth rate). Automatic system allows loading/unloading at high temperatures. As a result, heating and cooling times are short, while the baking step has been inhibited. This ideal condition allows the growth of true undoped materials.

In the process of silicon carbide epitaxy, CVD SiC Coating Nozzles play a crucial role in the growth and quality of epitaxial layers. Here is the expanded explanation of the role of nozzles in silicon carbide epitaxy:

● Gas Supply and Control: Nozzles are used to deliver the gas mixture required during epitaxy, including silicon source gas and carbon source gas. Through the nozzles, gas flow and ratios can be precisely controlled to ensure uniform growth of the epitaxial layer and the desired chemical composition.

● Temperature Control: Nozzles also help in controlling the temperature within the epitaxy reactor. In silicon carbide epitaxy, temperature is a critical factor affecting growth rate and crystal quality. By providing heat or cooling gas through the nozzles, the growth temperature of the epitaxial layer can be adjusted for optimal growth conditions.

● Gas Flow Distribution: The design of the nozzles influences the uniform distribution of gas within the reactor. Uniform gas flow distribution ensures the uniformity of the epitaxial layer and consistent thickness, avoiding issues related to material quality non-uniformity.

● Prevention of Impurity Contamination: Proper design and use of nozzles can help prevent impurity contamination during the epitaxy process. Suitable nozzle design minimizes the likelihood of external impurities entering the reactor, ensuring the purity and quality of the epitaxial layer.

CVD SIC COATING FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating: