VeTek Semiconductor Solid Silicon Carbide is an important ceramic component in plasma etching equipment, solid silicon carbide(CVD silicon carbide) parts in the etching equipment include focusing rings, gas showerhead, tray, edge rings, etc. Due to the low reactivity and conductivity of solid silicon carbide(CVD silicon carbide) to chlorine - and fluorine-containing etching gases, it is an ideal material for plasma etching equipment focusing rings and other components.
For example, the focus ring is an important part placed outside the wafer and in direct contact with the wafer, by applying a voltage to the ring to focus the plasma passing through the ring, thereby focusing the plasma on the wafer to improve the uniformity of processing. The traditional focus ring is made of silicon or quartz, conductive silicon as a common focus ring material, it is almost close to the conductivity of silicon wafers, but the shortage is poor etching resistance in fluorine-containing plasma, etching machine parts materials often used for a period of time, there will be serious corrosion phenomenon, seriously reducing its production efficiency.
Solid SiC Focus Ring Working Principle:
Comparison of Si Based Focusing Ring and CVD SiC Focusing Ring:
Comparison of Si Based Focusing Ring and CVD SiC Focusing Ring | ||
Item | Si | CVD SiC |
Density (g/cm3) | 2.33 | 3.21 |
Band gap (eV) | 1.12 | 2.3 |
Thermal conductivity (W/cm℃) | 1.5 | 5 |
CTE (x10-6/℃) | 2.6 | 4 |
Elastic modulus (GPa) | 150 | 440 |
Hardness (GPa) | 11.4 | 24.5 |
Resistance to wear and corrosion | Poor | Excellent |
VeTek Semiconductor offers advanced solid silicon carbide (CVD silicon carbide) parts like SiC focusing rings for semiconductor equipment. Our solid silicon carbide focusing rings outperform traditional silicon in terms of mechanical strength, chemical resistance, thermal conductivity, high-temperature durability, and ion etching resistance.
High density for reduced etching rates.
Excellent insulation with a high bandgap.
High thermal conductivity and low coefficient of thermal expansion.
Superior mechanical impact resistance and elasticity.
High hardness, wear resistance, and corrosion resistance.
Manufactured using plasma-enhanced chemical vapor deposition (PECVD) techniques, our SiC focusing rings meet the increasing demands of etching processes in semiconductor manufacturing. They are designed to withstand higher plasma power and energy, specifically in capacitively coupled plasma (CCP) systems.
VeTek Semiconductor's SiC focusing rings provide exceptional performance and reliability in semiconductor device manufacturing. Choose our SiC components for superior quality and efficiency.
High purity CVD SiC raw material prepared by CVD is the best source material for silicon carbide crystal growth by physical vapor transport. The density of High purity CVD SiC raw material supplied by VeTek Semiconductor is higher than that of small particles formed by spontaneous combustion of Si and C-containing gases, and it does not require a dedicated sintering furnace and has a nearly constant evaporation rate. It can grow extremely high quality SiC single crystals. Looking forward to your inquiry.
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