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Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

Tantalum carbide (TaC) coatings are widely used in the semiconductor field, mainly for epitaxial growth reactor components, single crystal growth key components, high-temperature industrial components, MOCVD system heaters and wafer carriers.Its excellent high temperature resistance and corrosion resistance can improve equipment durability, yield and crystal quality, reduce energy consumption and improve stability.

Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

Single crystal materials alone cannot meet the needs of the growing production of various semiconductor devices. At the end of 1959, a thin layer of single crystal material growth technology - epitaxial growth was developed.