MOCVD Susceptor

Vetek Semiconductor focuses on the research and development and industrialization of CVD SiC coating and CVD TaC coating. Taking MOCVD Susceptor as an example, the product is highly processed with high precision, dense CVD SIC coating, high temperature resistance and strong corrosion resistance. An inquiry into us is welcome.

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Product Description

As the CVD SiC coating manufacturer, VeTek Semiconductor would like to provide you Aixtron G5 MOCVD Susceptors which is made of high purity graphite and CVD SiC coating(below 5ppm).

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Micro LEDs technology is disrupting the existing LED ecosystem with methods and approaches that have until now only been seen in the LCD or semiconductor industries, and the Aixtron G5 MOCVD system perfectly supports these stringent extensional requirements. The Aixtron G5 is a powerful MOCVD reactor designed primarily for silicon-based GaN epitaxy growth.

It is essential that all epitaxial wafers produced have a very tight wavelength distribution and very low surface defect levels, which requires innovative MOCVD technology.

Aixtron G5 is a horizontal Planetary disk epitaxy system, mainly Planetary disc, MOCVD susceptor, cover ring, ceiling, supporting ring, cover disc, exhuast collector, pin washer, collector inlet ring, etc., The main product materials are CVD SiC coating+high purity graphite, semiconductor quartz, CVD TaC coating+high purity graphite, rigid felt and other materials.

MOCVD Susceptor features are as follows:

Base material protection: CVD SiC coating acts as a protective layer in the epitaxial process, which can effectively prevent the erosion and damage of the external environment to the base material, provide reliable protective measures, and extend the service life of the equipment.

Excellent thermal conductivity: The CVD SiC coating has excellent thermal conductivity and can quickly transfer heat from the base material to the coating surface, improving the thermal management efficiency during epitaxy and ensuring that the equipment operates within the appropriate temperature range.

Improve film quality: CVD SiC coating can provide a flat, uniform surface, providing a good foundation for film growth. It can reduce the defects caused by lattice mismatch, improve the crystallinity and quality of the film, and thus improve the performance and reliability of the epitaxial film.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1