High Purity SiC Cantilever Paddle

High Purity SiC Cantilever Paddle is a key component used in semiconductor processing equipment. The product is made of high-purity silicon carbide (SiC) material. Combined with its excellent characteristics of high purity, high thermal stability and corrosion resistance, it is widely used in processes such as wafer transfer, support and high-temperature processing, providing reliable guarantee for ensuring process accuracy and product quality.

Generally, High Purity SiC Cantilever Paddle plays the following specific roles in the semiconductor processing process:

Wafer transfer: High Purity SiC Cantilever Paddle is usually used as a wafer transfer device in high-temperature diffusion or oxidation furnaces. Its high hardness makes it wear-resistant and not easy to deform during long-term use, and can ensure that the wafer remains accurately positioned during the transfer process. Combined with its high temperature and corrosion resistance, it can safely transfer wafers in and out of the furnace tube in high temperature environments without causing any contamination or damage to the wafers.

Wafer support: SiC material has a low coefficient of thermal expansion, which means that its size changes less when the temperature changes, which helps maintain precise control in the process. In chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes, SiC Cantilever Paddle is used to support and fix the wafer to ensure that the wafer remains stable and flat during the deposition process, thereby improving the uniformity and quality of the film.

Application of high temperature processes: SiC Cantilever Paddle has excellent thermal stability and can withstand temperatures of up to 1600°C. Therefore, this product is widely used in high temperature annealing, oxidation, diffusion and other processes.

Basic physical properties of High Purity SiC Cantilever Paddle:

High Purity SiC Cantilever Paddle shops:

Overview of the semiconductor chip epitaxy industry chain: