CVD SiC coating barrel susceptor

Epitaxy growth is the process of growing a single crystal film (single crystal layer) on a single crystal substrate (substrate). This single crystal film is called an epilayer. When the epilayer and the substrate are made of the same material, it is called homoepitaxial growth; when they are made of different materials, it is called heteroepitaxial growth.

According to the structure of the epitaxial reaction chamber, there are two types: horizontal and vertical. The susceptor of the vertical epitaxial furnace rotates continuously during operation, so it has good uniformity and large production volume, and has become the mainstream epitaxial growth solution.The CVD SiC coating barrel susceptor is the core component of the barrel type epitaxial furnace. And VeTek Semiconductor is the production expert of SiC Coated Graphite Barrel Susceptor for EPI.

In epitaxial growth equipment such as MOCVD and HVPE, SiC Coated Graphite Barrel Susceptors are used to fix the wafer to ensure that it remains stable during the growth process. The wafer is placed on the barrel type susceptor. As the production process proceeds, the susceptor rotates continuously to heat the wafer evenly, while the wafer surface is exposed to the reaction gas flow, ultimately achieving uniform epitaxial growth.

CVD SiC coating barrel type susceptor schematic

The epitaxial growth furnace is a high-temperature environment filled with corrosive gases. To overcome such a harsh environment, VeTek Semiconductor added a layer of SiC coating to the graphite barrel susceptor through the CVD method, thus obtaining a SiC Coated Graphite Barrel Susceptor

Structural features:

●  Uniform temperature distribution: The barrel-shaped structure can distribute heat more evenly and avoid stress or deformation of the wafer due to local overheating or cooling.

●  Reduce airflow disturbance: The design of the barrel-shaped susceptor can optimize the distribution of airflow in the reaction chamber, allowing the gas to flow smoothly over the surface of the wafer, which helps to generate a flat and uniform epitaxial layer.

●  Rotation mechanism: The rotation mechanism of the barrel-shaped susceptor improves the thickness consistency and material properties of the epitaxial layer.

●  Large-scale production: The barrel-shaped susceptor can maintain its structural stability while carrying large wafers, such as 200 mm or 300 mm wafers, which is suitable for large-scale mass production.

VeTek Semiconductor CVD SiC coating barrel type susceptor is composed of high-purity graphite and CVD SIC coating, which enables the susceptor to work for a long time in a corrosive gas environment and has good thermal conductivity and stable mechanical support. Ensure that the wafer is heated evenly and achieve precise epitaxial growth.

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1

VeTek Semiconductor CVD SiC coating barrel type susceptor