High purity SiC wafer boat carrier

VeTek Semiconductor offers customized High purity SiC wafer boat carrier. Made of high purity silicon carbide, it features slots to hold the wafer in place, preventing it from sliding during processing. CVD SiC coating is also available if required. As a professional and strong semiconductor manufacturer and supplier, VeTek Semiconductor's High purity SiC wafer boat carrier is price competitive and high quality. VeTek Semiconductor looks forward to being your long-term partner in China.

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Product Description

VeTekSemi High purity SiC wafer boat carrier is an important bearing component used in annealing furnaces, diffusion furnaces and other equipment in the semiconductor manufacturing process. High purity SiC wafer boat carrier is usually made of high purity silicon carbide material and mainly includes the following parts:

• Boat support body: a structure similar to a bracket, specially used to carry silicon wafers or other semiconductor materials.

• Support structure: Its support structure design enables it to bear heavy loads at high temperatures and will not deform or damage during high temperature treatment.

silicon carbide material

Physical properties of Recrystallized Silicon Carbide：

Property	Typical Value
Working temperature (°C)	1600°C (with oxygen), 1700°C (reducing environment)
SiC content	> 99.96%
Free Si content	< 0.1%
Bulk density	2.60-2.70 g/cm3
Apparent porosity	< 16%
Compression strength	> 600 MPa
Cold bending strength	80-90 MPa (20°C)
Hot bending strength	90-100 MPa (1400°C)
Thermal expansion @1500°C	4.70*10^-6/°C
Thermal conductivity @1200°C	23 W/m•K
Elastic modulus	Elastic modulus240 GPa
Thermal shock resistance	Extremely good

If the production process requirements are higher, CVD SiC coating can be performed on the High purity SiC wafer boat carrier to make the purity reach more than 99.99995%, further improving its high temperature resistance.

Basic physical properties of CVD SiC coating:

Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1

During high temperature treatment, the High purity SiC wafer boat carrier enables the silicon wafer to be heated evenly to avoid local overheating. In addition, the high temperature resistance of silicon carbide material enables it to maintain structural stability at temperatures of 1200°C or even higher. working principle of High purity SiC wafer boat carrier

During the diffusion or annealing process, the cantilever paddle and the High purity SiC wafer boat carrier work together. The cantilever paddle slowly pushes the High purity SiC wafer boat carrier carrying the silicon wafer into the furnace chamber and stops it at a designated position for processing.

The High purity SiC wafer boat carrier maintains contact with the silicon wafer and is fixed in a specific position during the heat treatment process, while the cantilever paddle helps keep the entire structure in the right position while ensuring temperature uniformity.

The High purity SiC wafer boat carrier and the cantilever paddle work together to ensure the accuracy and stability of the high temperature process.

VeTek Semiconductor provides you with customized High purity SiC wafer boat carrier according to your needs. Looking forward to your inquiry.

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