China SiC Shower Head Manufacturer, Supplier, Factory

This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.