SiC Crystal Growth Porous Graphite

SiC Crystal Growth Porous Graphite is a material made from porous graphite with a highly controllable pore structure. In semiconductor processing, it shows excellent thermal conductivity, high temperature resistance and chemical stability, so it is widely used in physical vapor deposition, chemical vapor deposition and other processes, significantly improving the efficiency of the production process and product quality, becoming an optimized semiconductor Materials critical to manufacturing equipment performance.

In the PVD process, SiC Crystal Growth Porous Graphite is usually used as a substrate support or fixture. Its function is to support the wafer or other substrates and ensure the stability of the material during the deposition process. The thermal conductivity of Porous Graphite is usually between 80 W/m·K and 120 W/m·K, which enables Porous Graphite to conduct heat quickly and evenly, avoiding local overheating, thereby preventing uneven deposition of thin films, greatly improving Process efficiency.

In addition, the typical porosity range of SiC Crystal Growth Porous Graphite is 20% ~ 40%. This characteristic can help disperse the gas flow in the vacuum chamber and prevent the gas flow from affecting the uniformity of the film layer during the deposition process.

In the CVD process, the porous structure of SiC Crystal Growth Porous Graphite provides an ideal path for uniform distribution of gases. The reactive gas is deposited on the surface of the substrate through a gas-phase chemical reaction to form a thin film. This process requires precise control of the flow and distribution of the reactive gas. The 20% ~ 40% porosity of Porous Graphite can effectively guide gas and evenly distribute it on the surface of the substrate, improving the uniformity and consistency of the deposited film layer.

Porous Graphite is commonly used as furnace tubes, substrate carriers or mask materials in CVD equipment, especially in semiconductor processes that require high purity materials and have extremely high requirements for particulate contamination. At the same time, the CVD process usually involves high temperatures, and Porous Graphite can maintain its physical and chemical stability at temperatures up to 2500°C, making it an indispensable material in the CVD process.

Despite its porous structure, SiC Crystal Growth Porous Graphite still has a compressive strength of 50 MPa, which is sufficient to handle the mechanical stress generated during semiconductor manufacturing.

As the leader of Porous Graphite products in China's semiconductor industry, Veteksemi has always supported product customization services and satisfactory product prices. No matter what your specific requirements are, we will match the best solution for your Porous Graphite and look forward to your consultation at any time.

Basic physical properties of SiC Crystal Growth Porous Graphite:

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Overview of the semiconductor chip epitaxy industry chain: