4H Semi Insulating Type SiC Substrate

Vetek Semiconductor 4H Semi Insulating Type SiC plays multiple key roles in the semiconductor processing process. Combined with its high resistivity, high thermal conductivity, wide bandgap and other properties, it is widely used in high-frequency, high-power and high-temperature fields, especially in microwave and RF applications. It is an indispensable component product in the semiconductor manufacturing process.

The resistivity of Vetek Semiconductor 4H Semi Insulating Type SiC Substrate is usually between 10^6 Ω·cm and 10^9 Ω·cm. This high resistivity can suppress parasitic currents and reduce signal interference, especially in high-frequency and high-power applications. More importantly, the high resistivity of the 4H SI-type SiC substrate has extremely low leakage current under high temperature and high pressure, which can ensure the stability and reliability of the device.

The breakdown electric field strength of the 4H SI-type SiC substrate is as high as 2.2-3.0 MV/cm, which determines that the 4H SI-type SiC substrate can withstand higher voltages without breakdown, so the product is very suitable for working under high voltage and high power conditions. More importantly, the 4H SI-type SiC substrate has a wide bandgap of about 3.26 eV, so the product can maintain excellent insulation performance at high temperature and high voltage and reduce electronic noise.

In addition, the thermal conductivity of the 4H SI-type SiC substrate is about 4.9 W/cm·K, so this product can effectively reduce the problem of heat accumulation in high-power applications and extend the life of the device. Suitable for electronic devices in high-temperature environments.

By growing a GaN epitaxial layer on a semi-insulating silicon carbide substrate, the silicon carbide-based GaN epitaxial wafer can be further made into microwave radio frequency devices such as HEMT, which are used in information communication, radio detection and other fields.

Vetek Semiconductor is constantly pursuing higher crystal quality and processing quality to meet customer needs.Currently, 4-inch and 6-inch products are available, and 8-inch products are under development. 

Semi-Insulating SiC Substrate BASIC PRODUCT SPECIFICATIONS:

Semi-Insulating SiC Substrate CRYSTAL QUALITY SPECIFICATIONS:

4H Semi Insulating Type SiC Substrate Detection Method and Terminology: