CVD SiC Coating Protector

Vetek Semiconductor provides CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.

Send Inquiry

Product Description

High quality CVD SiC Coating protector is offered by China manufacturer Vetek Semiconductor. Buy CVD SiC Coating Protector which is of high quality directly with low price.

LPE SiC epitaxy refers to the use of low pressure epitaxy (LPE) technology to grow silicon carbide epitaxy layers on silicon carbide substrates. SiC is an excellent semiconductor material, with high thermal conductivity, high breakdown voltage, high saturated electron drift speed and other excellent properties, is often used in the manufacture of high temperature, high frequency and high power electronic devices.

LPE SiC epitaxy is a commonly used growth technique that utilizes the principles of chemical vapor deposition (CVD) to deposit a silicon-carbide material on a substrate to form the desired crystal structure under the right temperature, atmosphere and pressure conditions. This epitaxy technique can control the lattice matching, thickness and doping type of the epitaxy layer, thus affecting the device performance.

Benefits of LPE SiC epitaxy include:

High crystal quality: LPE can grow high-quality crystals at high temperatures.

Control of epitaxial layer parameters: The thickness, doping and lattice matching of the epitaxial layer can be precisely controlled to meet the requirements of a specific device.

Suitable for specific devices: SiC epitaxial layers are suitable for manufacturing semiconductor devices with special requirements such as power devices, high-frequency devices and high-temperature devices.

In LPE SiC epitaxy, a typical product is the halfmoon parts. The upstream and downstream CVD SiC Coating Protector, assembled on the second half of the halfmoon parts, is connected with a quartz tube, which can pass gas to drive the tray base to rotate and control the temperature. It is an important part of silicon carbide epitaxy.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1