SiC Crystal Growth New Technology

VeTek Semiconductor' SiC Crystal Growth New Technology uses discarded CVD-SiC blocks to recycle the material as a source for growing SiC crystals. The CVD-SiC bluk used for single crystal growth are prepared as size-controlled broken blocks, which have significant differences in shape and size compared to the commercial SiC powder commonly used in the PVT process, so the behavior of SiC single crystal growth is expected to show significantly different behavior. Before the SiC single crystal growth experiment was carried out, computer simulations were performed to obtain high growth rates, and the hot zone was configured accordingly for single crystal growth. After crystal growth, the grown crystals were evaluated by cross-sectional tomography, micro-Raman spectroscopy, high-resolution X-ray diffraction, and synchrotron radiation white-beam X-ray topography.

Manufacturing and preparation process:

1. Prepare CVD-SiC block source: First, we need to prepare a high-quality CVD-SiC block source, which is usually of high purity and high density. This can be prepared by chemical vapor deposition (CVD) method under appropriate reaction conditions.

2. Substrate preparation: Select an appropriate substrate as the substrate for SiC single crystal growth. Commonly used substrate materials include silicon carbide, silicon nitride, etc., which have a good match with the growing SiC single crystal.

3. Heating and sublimation: Place the CVD-SiC block source and substrate in a high-temperature furnace and provide appropriate sublimation conditions. Sublimation means that at high temperature, the block source directly changes from solid to vapor state, and then re-condenses on the substrate surface to form a single crystal.

4. Temperature control: During the sublimation process, the temperature gradient and temperature distribution need to be precisely controlled to promote the sublimation of the block source and the growth of single crystals. Appropriate temperature control can achieve ideal crystal quality and growth rate.

5. Atmosphere control: During the sublimation process, the reaction atmosphere also needs to be controlled. High-purity inert gas (such as argon) is usually used as a carrier gas to maintain appropriate pressure and purity and prevent contamination by impurities.

6. Single crystal growth: The CVD-SiC block source undergoes a vapor phase transition during the sublimation process and recondenses on the substrate surface to form a single crystal structure. Rapid growth of SiC single crystals can be achieved through appropriate sublimation conditions and temperature gradient control.

Specifications:

Purity excluding nitrogen: better than 99.9999%(6N).

Impurity levels (by glow discharge mass spectrometry)

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