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    • China SiC Epitaxial CVD system Manufacturer, Supplier, Factory

    As a professional SiC Epitaxial CVD system manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC Epitaxial CVD system made in China, you can leave us a message.

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      Disc Susceptor

      Vetek Semiconductor provide edge-cutting Graphite Disc Susceptor. The SiC coating provides superior thermal stability, excellent chemical resistance, and enhanced process uniformity, ensuring optimal performance and reliability. Experience the next level of efficiency and precision with Vetek Semiconductor's SiC-coated Disc Susceptor.
    • Silicon Carbide Wafer Boat for Horizontal Furnace

      Silicon Carbide Wafer Boat for Horizontal Furnace

      VeTek Semiconductor is a professional manufacturer and supplier in China for silicon carbide wafer boat for horizontal furnace, with years of experience in R&D and production, can control the quality well and offer a competitive price. You can rest assured to buy the silicon carbide wafer boat for horizontal furnace from us.
    • silicon carbide ceramic coating heater

      silicon carbide ceramic coating heater

      VeTek Semiconductor is a professional silicon carbide ceramic coating heater manufacturer in China. The silicon carbide ceramic coating heater is mainly designed for the high temperature and harsh environment of semiconductor manufacturing. Its ultra-high melting point, excellent corrosion resistance and outstanding thermal conductivity determine the indispensability of this product in the semiconductor production process. We sincerely hope to establish a long-term business relationship with you.
    • SiC Coated Top Plate for LPE PE2061S

      SiC Coated Top Plate for LPE PE2061S

      VeTek Semiconductor is a leading SiC Coated Top Plate for LPE PE2061S manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a SiC Coated Top Plate for LPE PE2061S designed specifically for LPE silicon epitaxy reactor. This SiC Coated Top Plate for LPE PE2061S is the top together with barrel susceptor.This CVD SiC coated plate boasts high purity, excellent thermal stability, and uniformity, making it suitable for growing high-quality epitaxial layers.We welcome you to visit our factory in China.
    • SiC Coating Cover Segments Inner

      SiC Coating Cover Segments Inner

      At VeTek Semiconductor, we specialize in the research, development, and industrialization of CVD SiC coating and CVD TaC coating. One exemplary product is the SiC Coating Cover Segments Inner, which undergoes extensive processing to achieve a highly precise and densely coated CVD SiC surface. This coating demonstrates exceptional resistance to high temperatures and provides robust corrosion protection. Feel free to contact us for any inquiries.
    • SiC Coated MOCVD Susceptor

      SiC Coated MOCVD Susceptor

      VeTek Semiconductor's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.
    • Related Blog
    • Reviews

    • Chip Manufacturing: Atomic Layer Deposition (ALD)

      In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

    • How thin can the Taiko process make silicon wafers?

      The Taiko process thins silicon wafers using its principles, technical advantages and process origins.

    • What’s the difference between Silicon Carbide and Tantalum Carbide Coatings?

      This article analyzes the product characteristics and application scenarios of tantalum carbide coating and silicon carbide coating from multiple perspectives.

    • How much do you know about sapphire?

      This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • Material of silicon carbide epitaxy

      The material of silicon carbide epitaxial layer is silicon carbide, which is usually used to manufacture high-power electronic devices and LEDs. It is widely used in the semiconductor industry due to its excellent thermal stability, mechanical strength and high electrical conductivity.

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