Tantalum Carbide Coated Tube for Crystal Growth

VeTek Semiconductor is a leading Tantalum Carbide Coated Tube for Crystal Growth manufacturer and innovator in China.We have been specialized in ceramic coating for many years.Our products have a high purity and high temperature resistance.We look forward to becoming your long-term partner in China.

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Product Description

You can rest assured to buy customized Tantalum Carbide Coated Tube for Crystal Growth from VeTek Semiconductor. We look forward to cooperating with you, if you want to know more, you can consult us now, we will reply to you in time!

VeTek Semiconductor offers Tantalum Carbide Coated Tube for Crystal Growth specifically designed for SiC crystal growth using the Physical Vapor Transport (PVT) method. VeTek Semiconductor's graphite tubes feature high-purity with CVD tantalum carbide coating, ensuring optimal performance in SiC crystal growth. SiC crystals, known as third-generation semiconductors, hold immense potential in various applications. By utilizing our Tantalum Carbide Coated Tube for Crystal Growth, researchers and industry professionals can effectively optimize SiC growth and produce high-quality SiC crystal boules. Whether you are involved in research or industrial production, our products provide reliable solutions for efficient SiC crystal growth.

Besides TaC coated graphite tube, VeTek Semiconductor also supplies TaC coated rings, TaC coated crucible, TaC coated porous graphite, TaC coated graphite susceptor, TaC coated guide ring, TaC Tantalum Carbide coated plate, TaC Coating Ring, TaC coating graphite cover, TaC coated chunk for crystal growth furnace like below:

TaC coated graphite tube

PVT method SiC Crystal Growth

Product parameter of the Tantalum Carbide Coated Tube for Crystal Growth

Physical properties of TaC coating
Density	14.3 (g/cm³)
Specific emissivity	0.3
Thermal expansion coefficient	6.3 10^-6/K
Hardness (HK)	2000 HK
Resistance	1×10^-5 Ohm*cm
Thermal stability	<2500℃
Graphite size changes	-10~-20um
Coating thickness	≥20um typical value (35um±10um)