Silicon Carbide coated Epi susceptor

VeTek Semiconductor is a leading manufacturer and supplier of SiC coating products in China. VeTek Semiconductor's SiC coated Epi susceptor has the industry's top quality level, is suitable for multiple styles of epitaxial growth furnaces, and provides highly customized product services. VeTek Semiconductor looks forward to becoming your long-term partner in China.

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Product Description

Semiconductor epitaxy refers to the growth of a thin film with a specific lattice structure on the surface of a substrate material by methods such as gas phase, liquid phase or molecular beam deposition, so that the newly grown thin film layer (epitaxial layer) has the same or similar lattice structure and orientation as the substrate.

Epitaxy technology is crucial in semiconductor manufacturing, especially in the preparation of high-quality thin films, such as single crystal layers, heterostructures and quantum structures used to manufacture high-performance devices.

The Epi susceptor is a key component used to support the substrate in epitaxial growth equipment and is widely used in Silicon epitaxy. The quality and performance of the epitaxial pedestal directly affect the growth quality of the epitaxial layer and play a vital role in the final performance of semiconductor devices.

VeTek Semiconductor coated a layer of SIC coating on the surface of SGL graphite by CVD method, and obtained SiC coated epi susceptor with properties such as high temperature resistance, oxidation resistance, corrosion resistance, and thermal uniformity.

Semiconductor Barrel Reactor

In a typical barrel reactor, the SiC coated Epi susceptor has a barrel structure. The bottom of the SiC coated Epi susceptor is connected to the rotating shaft. During the epitaxial growth process, it maintains alternating clockwise and counterclockwise rotation. The reaction gas enters the reaction chamber through the nozzle, so that the gas flow forms a fairly uniform distribution in the reaction chamber, and finally forms a uniform epitaxial layer growth.

The relationship between the mass change of SiC coated graphite and the oxidation time

The results of published studies show that at 1400℃ and 1600℃, the mass of SiC coated graphite increases very little. That is, SiC coated graphite has a strong antioxidant capacity. Therefore, SiC coated Epi susceptor can work for a long time in most epitaxial furnaces. If you have more requirements or customized needs, please contact us. We are committed to providing the best quality SiC coated Epi susceptor solutions.

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1