As a leading manufacturer and supplier of SiC coated Satellite cover for MOCVD products in China, Vetek Semiconductor SiC coated Satellite cover for MOCVD products have extreme high temperature resistance, excellent oxidation resistance and excellent corrosion resistance, playing an irreplaceable role in ensuring high-quality epitaxial growth on wafers. Welcome your further inquiries.
As a trustworthy supplier and manufacturer of SiC coated Satellite cover for MOCVD, Vetek Semiconductor is committed to providing high-performance epitaxial process solutions to the semiconductor industry. Our products are well designed to serve as the critical MOCVD center plate when growing epitaxial layers on wafers, and are available in gear or ring structure options to meet different process needs. This base has excellent heat resistance and corrosion resistance, making it ideal for semiconductor processing in extreme environments.
Vetek Semiconductor's SiC coated Satellite cover for MOCVD has significant advantages in the market due to several important features. Its surface is completely coated with sic coating to effectively prevent peeling. It also has high-temperature oxidation resistance and can remain stable in environments up to 1600°C. Moreover, SiC Coated Graphite Susceptor for MOCVD is made through a CVD chemical vapor deposition process under high-temperature chlorination conditions, ensuring high purity and providing excellent corrosion resistance to acids, alkalis, salts and organic reagents with a dense surface and fine particles.
In addition, our SiC coated Satellite cover for MOCVD is optimized to achieve the best laminar air flow pattern to ensure uniform heat distribution and effectively prevent the diffusion of contaminants or impurities, thus ensuring the quality of epitaxial growth on wafer chips. .
● Fully Coated to Avoid Peeling: The surface is evenly coated with silicon carbide to prevent material from peeling off.
● High temperature oxidation resistance: SiC Coated MOCVD Susceptor can maintain stable performance in environments up to 1600°C.
● High-Purity Process: SiC Coating MOCVD Susceptor is made using CVD deposition process to ensure impurity-free high-purity silicon carbide coating.
● Excellent corrosion resistance: MOCVD Susceptor is composed of dense surface and tiny particles, which is resistant to acids, alkalis, salts and organic solvents.
● Optimized laminar flow mode: ensures uniform heat distribution and improves the consistency and quality of epitaxial growth.
● Effective anti-pollution: Prevent the diffusion of impurities and ensure the purity of the epitaxial process.
Vetek Semiconductor's SiC coated Satellite cover for MOCVD has become an ideal choice in semiconductor epitaxial production due to its high performance and reliability, providing customers with trustworthy product and process guarantees. Moreover, VetekSemi is always committed to providing advanced technology and product solutions to the semiconductor industry, and provides customized SiC Coating MOCVD Susceptor product services. We sincerely look forward to becoming your long-term partner in China.
Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) oriented
Density
3.21 g/cm³
Hardness
2500 Vickers hardness(500g load)
Grain Size
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus
430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1
Vetek Semiconductor's SiC coated Satellite cover for MOCVD shops: