VeTek Semiconductor provides high-performance SiC Process Tubes for semiconductor manufacturing. Our SiC Process Tubes excel in oxidation, diffusion processes. With superior quality and craftsmanship, these tubes offer high-temperature stability and thermal conductivity for efficient semiconductor processing. We offer competitive pricing and seek to be your long-term partner in China.
VeTek Semiconductor is a leading China CVD SiC and TaC manufacturer, supplier and exporter. Adhering to the pursuit of perfect quality of products, so that our SiC Process Tubes have been satisfied by many customers. Extreme design, quality raw materials, high performance and competitive price are what every customer wants, and that's also what we can offer you. Of course, also essential is our perfect after-sales service. If you are interested in our spare parts for semiconductor services, you can consult us now, we will reply to you in time!
VeTek Semiconductor SiC Process Tube is a versatile component widely employed in semiconductor, photovoltaic, and microelectronic device manufacturing for its outstanding attributes such as high-temperature stability, chemical resistance, and superior thermal conductivity. These qualities render it a preferred choice for rigorous high-temperature processes, ensuring consistent heat distribution and a stable chemical environment that significantly enhances manufacturing efficiency and product quality.
VeTek Semiconductor's SiC Process Tube is recognized for its exceptional performance, commonly utilized in oxidation, diffusion, annealing, and chemical vapor deposition (CVD) processes within semiconductor manufacturing. With a focus on excellent craftsmanship and product quality, our SiC Process Tube guarantees efficient and dependable semiconductor processing, leveraging the high-temperature stability and thermal conductivity of SiC material. Committed to providing top-tier products at competitive prices, we aspire to be your trusted, long-term partner in China.
We are the only SiC plant in China with 99.96% purity, which can be used directly for wafer contact and provide CVD silicon carbide coating to reduce impurity content to less than 5ppm.
Physical properties of Recrystallized Silicon Carbide | |
Property | Typical Value |
Working temperature (°C) | 1600°C (with oxygen), 1700°C (reducing environment) |
SiC content | > 99.96% |
Free Si content | < 0.1% |
Bulk density | 2.60~2.70 g/cm3 |
Apparent porosity | < 16% |
Compression strength | > 600 MPa |
Cold bending strength | 80~90 MPa (20°C) |
Hot bending strength | 90~100 MPa (1400°C) |
Thermal expansion @1500°C | 4.70 10-6/°C |
Thermal conductivity @1200°C | 23 W/m•K |
Elastic modulus | 240 GPa |
Thermal shock resistance | Extremely good |