China SiC Coated Graphite Susceptor for MOCVD Manufacturer, Supplier, Factory

According to overseas news, two sources revealed on June 24 that ByteDance is working with US chip design company Broadcom to develop an advanced artificial intelligence (AI) computing processor, which will help ByteDance ensure an adequate supply of high-end chips amid tensions between China and the United States.

In the semiconductor manufacturing industry, as device size continues to shrink, the deposition technology of thin film materials has posed unprecedented challenges. Atomic Layer Deposition (ALD), as a thin film deposition technology that can achieve precise control at the atomic level, has become an indispensable part of semiconductor manufacturing. This article aims to introduce the process flow and principles of ALD to help understand its important role in advanced chip manufacturing.

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

The article analyzes the specific challenges faced by the CVD TaC coating process for SiC single crystal growth during semiconductor processing, such as material source and purity control, process parameter optimization, coating adhesion, equipment maintenance and process stability, environmental protection and cost control, as well as the corresponding industry solutions.