SiC Coated Epi Susceptor

As the top domestic manufacturer of silicon carbide and tantalum carbide coatings, VeTek Semiconductor is able to provide precision machining and uniform coating of SiC Coated Epi Susceptor, effectively controlling the purity of coating and product below 5ppm. The product life is comparable to that of SGL. Welcome to inquire us.

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Product Description

You can rest assured to buy SiC Coated Epi Susceptor from our factory.

VeTek Semiconductor SiC Coated Epi Susceptor is Epitaxial barrel is a special tool for the semiconductor epitaxial growth process with many advantages:

Efficient production capacity: The SiC Coated Epi Susceptor can accommodate multiple wafers, making it possible to perform epitaxial growth of multiple wafers simultaneously. This efficient production capacity can greatly improve production efficiency and reduce production cycles and costs.

Optimized temperature control: The SiC Coated Epi Susceptor is equipped with an advanced temperature control system to precisely control and maintain the desired growth temperature. Stable temperature control helps to achieve uniform epitaxial layer growth and improve the quality and consistency of epitaxial layer.

Uniform atmosphere distribution: The SiC Coated Epi Susceptor provides a uniform atmosphere distribution during growth, ensuring that each wafer is exposed to the same atmosphere conditions. This helps avoid growth differences between wafers and improves the uniformity of the epitaxial layer.

Effective impurity control: SiC Coated Epi Susceptor design helps to reduce the introduction and diffusion of impurities. It can provide good sealing and atmosphere control, reduce the impact of impurities on the quality of the epitaxial layer, and thus improve device performance and reliability.

Flexible process development: The SiC Coated Epi Susceptor has flexible process development capabilities that allow rapid adjustment and optimization of growth parameters. This enables researchers and engineers to conduct rapid process development and optimization to meet the epitaxial growth needs of different applications and requirements.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1