SiC Coated Graphite Susceptor for MOCVD

VeTek Semiconductor is a leading manufacturer and supplier of SiC Coated Graphite Susceptor for MOCVD in China, specializing in SiC coating applications and epitaxial semiconductor products for the semiconductor industry. Our MOCVD SiC coated graphite susceptors offer competitive quality and pricing, serving markets across Europe and America. We are committed to becoming your long-term, trusted partner in advancing semiconductor manufacturing.

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Product Description

VeTek Semiconductor’s SiC Coated Graphite Susceptor for MOCVD is a high-purity SiC coated graphite carrier, specifically designed for epitaxial layer growth on wafer chips. As a central component in MOCVD processing, typically shaped as a gear or ring, it boasts exceptional heat resistance and corrosion resistance, ensuring stability in extreme environments.

Key Features of the MOCVD SiC Coated Graphite Susceptor:

● Flake-Resistant Coating: Ensures uniform SiC coating coverage on all surfaces, reducing the risk of particle detachment

● Excellent High-Temperature Oxidation Resistance: Remains stable at temperatures up to 1600°C

● High Purity: Manufactured through CVD chemical vapor deposition, suitable for high-temperature chlorination conditions

● Superior Corrosion Resistance: Highly resistant to acids, alkalis, salts, and organic reagents

● Optimized Laminar Airflow Pattern: Enhances the uniformity of airflow dynamics

● Uniform Thermal Distribution: Ensures stable heat distribution during high-temperature processes

● Contamination Prevention: Prevents diffusion of contaminants or impurities, ensuring wafer cleanliness

At VeTek Semiconductor, we adhere to strict quality standards, delivering reliable products and services to our clients. We select only premium materials, striving to meet and exceed industry performance requirements. Our SiC Coated Graphite Susceptor for MOCVD exemplifies this commitment to quality. Contact us to learn more about how we can support your semiconductor wafer processing needs.

CVD SIC FILM CRYSTAL STRUCTURE:

SEM DATA OF CVD SIC FILM

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10^-6K^-1