CVD SiC Pancake Susceptor

Superior physical properties

VeTek Semiconductor CVD SiC Pancake Susceptor is manufactured using the latest chemical vapor deposition (CVD) technology to ensure excellent durability and extreme temperature adaptability. The following are its main physical properties:

●  Thermal stability: The high thermal stability of CVD SiC ensures stable performance under high temperature conditions.

●  Low thermal expansion coefficient: The material has an extremely low thermal expansion coefficient, which minimizes warping and deformation caused by temperature changes.

●  Chemical corrosion resistance: Excellent chemical resistance enables it to maintain high performance in a variety of harsh environments.

Precise support and optimized heat transfer

VeTekSemi's Pancake Susceptor based SiC coated is designed to accommodate semiconductor wafers and provide excellent support during epitaxial deposition. The SiC Pancake Susceptor is designed using advanced computational simulation technology to minimize warping and deformation under different temperature and pressure conditions. Its typical thermal expansion coefficient is about 4.0 × 10^^-6 /°C, which means that its dimensional stability is significantly better than traditional materials in high-temperature environments, thereby ensuring the consistency of wafer thickness (typically 200 mm to 300 mm).

In addition, the CVD Pancake Susceptor excels in heat transfer, with a thermal conductivity of up to 120 W/m·K. This high thermal conductivity can quickly and effectively conduct heat, enhance temperature uniformity within the furnace, ensure uniform heat distribution during epitaxial deposition, and reduce deposition defects caused by uneven heat. Optimized heat transfer performance is critical to improving deposition quality, which can effectively reduce process fluctuations and improve yield.

Through these design and performance optimizations, VeTek Semiconductor's CVD SiC Pancake Susceptor provides a solid foundation for semiconductor manufacturing, ensuring reliability and consistency under harsh processing conditions and meeting the stringent requirements of the modern semiconductor industry for high precision and quality.

CVD SIC FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1