China SiC Coated Graphite Barrel Susceptors Manufacturer, Supplier, Factory

Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

The chip manufacturing process includes photolithography,etching, diffusion, thin film, ion implantation, chemical mechanical polishing, cleaning, etc. This article roughly explains how these processes are integrated in sequence to manufacture a MOSFET.