SiC Coated Barrel Susceptor

VeTek Semiconductor is a leading China SiC coating and TaC coating manufacturer, supplier and exporter. Adhering to the pursuit of perfect quality of products, so that our SiC Coated Barrel Susceptor have been satisfied by many customers. Extreme design, quality raw materials, high performance and competitive price are what every customer wants, and that's also what we can offer you. Of course, also essential is our perfect after-sales service. If you are interested in our SiC Coated Barrel Susceptor services, you can consult us now, we will reply to you in time!

VeTek Semiconductor SiC Coated Barrel Susceptor is mainly used for LPE Si EPI reactors

LPE (Liquid Phase Epitaxy) silicon epitaxy is a commonly used semiconductor epitaxial growth technique for depositing thin layers of single-crystal silicon on silicon substrates. It is a liquid-phase growth method based on chemical reactions in a solution to achieve crystal growth.

The basic principle of LPE silicon epitaxy involves immersing the substrate into a solution containing the desired material, controlling temperature and solution composition, allowing the material in the solution to grow as a single-crystal silicon layer 

on the substrate surface. By adjusting the growth conditions and solution composition during epitaxial growth, desired crystal quality, thickness, and doping concentration can be achieved.

LPE silicon epitaxy offers several characteristics and advantages. Firstly, it can be performed at relatively low temperatures, reducing thermal stress and impurity diffusion in the material. Secondly, LPE silicon epitaxy provides high uniformity and excellent crystal quality, suitable for manufacturing high-performance semiconductor devices. Additionally, LPE technology enables the growth of complex structures, such as multilayer and heterostructures.

In LPE silicon epitaxy, the SiC Coated Barrel Susceptor is a crucial epitaxial component. It is typically used to hold and support the silicon substrates required for epitaxial growth while providing temperature and atmosphere control. The SiC coating enhances the high-temperature durability and chemical stability of the susceptor, meeting the requirements of the epitaxial growth process. By utilizing the SiC Coated Barrel Susceptor, the efficiency and consistency of epitaxial growth can be improved, ensuring the growth of high-quality epitaxial layers.

Basic physical properties of CVD SiC coating

CVD SIC FILM CRYSTAL STRUCTURE