CVD TaC coating planetary SiC epitaxial susceptor

Aixtron planetary reactor is one of the most advanced MOCVD equipment. It has become a learning template for many reactor manufacturers. Based on the principle of horizontal laminar flow reactor, it ensures a clear transition between different materials and has unparalleled control over the deposition rate in the single atomic layer area, depositing on a rotating wafer under specific conditions. 

The most critical of these is the multiple rotation mechanism: the reactor adopts multiple rotations of the CVD TaC coating planetary SiC epitaxial susceptor. This rotation allows the wafer to be evenly exposed to the reaction gas during the reaction, thereby ensuring that the material deposited on the wafer has excellent uniformity in layer thickness, composition and doping.

TaC ceramic is a high performance material with high melting point (3880°C), excellent thermal conductivity, electrical conductivity, high hardness and other excellent properties, the most important is corrosion resistance and oxidation resistance. For the epitaxial growth conditions of SiC and group III nitride semiconductor materials, TaC has excellent chemical inertiousness. Therefore, the CVD TaC coating planetary SiC epitaxial susceptor prepared by CVD method has obvious advantages in the SiC epitaxial growth process.

SEM image of the cross-section of TaC-coated graphite

●  High temperature resistance:The SiC epitaxial growth temperature is as high as 1500℃ - 1700℃ or even higher. The melting point of TaC is as high as about 4000℃. After the TaC coating is applied to the graphite surface, the graphite parts can maintain good stability at high temperatures, withstand the high temperature conditions of SiC epitaxial growth, and ensure the smooth progress of the epitaxial growth process.

●  Enhanced corrosion resistance:The TaC coating has good chemical stability, effectively isolates these chemical gases from contact with graphite, prevents graphite from being corroded, and extends the service life of graphite parts.

●  Improved thermal conductivity:The TaC coating can improve the thermal conductivity of graphite, so that heat can be more evenly distributed on the surface of the graphite parts, providing a stable temperature environment for SiC epitaxial growth. This helps to improve the growth uniformity of the SiC epitaxial layer.

●  Reduce impurity contamination:The TaC coating does not react with SiC and can serve as an effective barrier to prevent impurity elements in the graphite parts from diffusing into the SiC epitaxial layer, thereby improving the purity and performance of the SiC epitaxial wafer.

VeTek Semiconductor is capable and good at making CVD TaC coating planetary SiC epitaxial susceptor and can provide customers with highly customized products. we are Looking forward to your inquiry.

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