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    • China MOCVD reactor Manufacturer, Supplier, Factory

    As a professional MOCVD reactor manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable MOCVD reactor made in China, you can leave us a message.

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    • SiC Coating Collector Center

      SiC Coating Collector Center

      VeTek Semiconductor, a reputable CVD SiC coating manufacturer, brings you the cutting-edge SiC Coating Collector Center in Aixtron G5 MOCVD system. These SiC Coating Collector Center are meticulously designed with high purity graphite and boast an advanced CVD SiC coating, ensuring high temperature stability, corrosion resistance, high purity.Looking forward to cooperating with you!
    • SiC Coated Graphite Barrel Susceptor for EPI

      SiC Coated Graphite Barrel Susceptor for EPI

      VeTek Semiconductor is a professional manufacturer, supplier and exporter for the SiC coated graphite barrel susceptor for EPI. Supported by a professional team and leading technology, VeTek Semiconductor can provide you high quality at reasonable prices. we welcome you to visit our factory for further discussion.
    • Aixtron Satellite wafer carrier

      Aixtron Satellite wafer carrier

      As a professional Aixtron Satellite Wafer Carrier product manufacturer and innovator in China, VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes in semiconductor processing, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
    • Silicon Carbide Wafer Boat for Horizontal Furnace

      Silicon Carbide Wafer Boat for Horizontal Furnace

      VeTek Semiconductor is a professional manufacturer and supplier in China for silicon carbide wafer boat for horizontal furnace, with years of experience in R&D and production, can control the quality well and offer a competitive price. You can rest assured to buy the silicon carbide wafer boat for horizontal furnace from us.
    • SiC coated Wafer Holder

      SiC coated Wafer Holder

      VeTek Semiconductor is a professional manufacturer and leader of SiC coated wafer holder products in China. SiC coated wafer holder is a wafer holder for the epitaxy process in semiconductor processing. It is an irreplaceable device that stabilizes the wafer and ensures the uniform growth of the epitaxial layer. Welcome your further consultation.
    • TaC Coating Susceptor

      TaC Coating Susceptor

      VeTek Semiconductor presents the TaC Coating Susceptor, With its exceptional TaC coating, this susceptor offers a multitude of advantages that set it apart from conventional solutions.Integrating seamlessly into existing systems, the TaC Coating Susceptor from VeTek Semiconductor guarantees compatibility and efficient operation. Its reliable performance and high-quality TaC coating consistently deliver exceptional results in SiC epitaxy processes.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
    • Related Blog
    • Reviews

    • What is the difference between CVD TaC and sintered TaC?

      This article first introduces the molecular structure and physical properties of TaC, and focuses on the differences and applications of sintered tantalum carbide and CVD tantalum carbide, as well as VeTek Semiconductor's popular TaC coating products.

    • What is CVD TAC Coating?

      CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

    • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

      The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

    • The Problems in the Etching Process

      Etching technology in semiconductor manufacturing often encounters problems such as loading effect, micro-groove effect and charging effect, which affect product quality. Improvement solutions include optimizing plasma density, adjusting reaction gas composition, improving vacuum system efficiency, designing reasonable lithography layout, and selecting appropriate etching mask materials and process conditions.

    • Characteristics of silicon epitaxy

      High purity: The silicon epitaxial layer grown by chemical vapor deposition (CVD) has extremely high purity, better surface flatness and lower defect density than traditional wafers.

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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    MOCVD ReactorMOCVD Reactor SusceptorsSiC-Coated MOCVD Reactor PartSusceptors for MOCVD Reactors

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