SiC Coated Pedestal

With years of experience in production SiC coated graphite parts, Vetek Semiconductor can supply a wide range of SiC coated pedestal. High quality SiC coated pedestal can meet many applications, if you need, please get our online timely service about SiC coated pedestal. In addition to the product list below, you can also customize your own unique SiC coated pedestal according to your specific needs.

Compared with other methods, such as MBE, LPE, PLD, MOCVD method has the advantages of higher growth efficiency, better control accuracy and relatively low cost, and is widely used in the current industry. With the increasing demand for semiconductor epitaxial materials, especially for a wide range of optoelectronic epitaxial materials such as LD and LED, it is very important to adopt new equipment designs to further increase production capacity and reduce costs.

Among them, the graphite tray loaded with substrate used in MOCVD epitaxial growth is a very important part of MOCVD equipment. The graphite tray used in the epitaxial growth of group III nitrides, in order to avoid the corrosion of ammonia, hydrogen and other gases on the graphite, generally on the surface of the graphite tray will be plated with a thin uniform silicon carbide protective layer. 

In the epitaxial growth of the material, the uniformity, consistency and thermal conductivity of the silicon carbide protective layer are very high, and there are certain requirements for its life. Vetek Semiconductor's SiC coated pedestal reduce the production cost of graphite pallets and improve their service life, which has a great role in reducing the cost of MOCVD equipment. The SiC coated pedestal is also an important part of the MOCVD reaction chamber, which effectively improves the production efficiency.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating