MOCVD Epitaxial Susceptor for 4" Wafer

VeTek Semiconductor is a professional manufacturer and supplier, who is dedicated to providing high-quality MOCVD Epitaxial Susceptor for 4" Wafer. with rich industry experience and a professional team, we are able to deliver expert and efficient solutions to our clients.

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Product Description

VeTek Semiconductor is a professional leader China MOCVD Epitaxial Susceptor for 4" wafer manufacturer with high quality and reasonable price. Welcome to contact us.The MOCVD Epitaxial Susceptor for 4" wafer is a critical component in the metal-organic chemical vapor deposition (MOCVD) process, which is widely used for the growth of high-quality epitaxial thin films, including gallium nitride (GaN), aluminum nitride (AlN), and silicon carbide (SiC). The susceptor serves as a platform to hold the substrate during the epitaxial growth process and plays a crucial role in ensuring uniform temperature distribution, efficient heat transfer, and optimal growth conditions.

MOCVD Epitaxial Susceptor for 4" wafer is typically made of high-purity graphite, silicon carbide, or other materials with excellent thermal conductivity, chemical inertness, and resistance to thermal shock.

Applications:

MOCVD epitaxial susceptors find applications in various industries, including:

Power electronics: growth of GaN-based high-electron-mobility transistors (HEMTs) for high-power and high-frequency applications.

Optoelectronics: growth of GaN-based light-emitting diodes (LEDs) and laser diodes for efficient lighting and display technologies.

Sensors: growth of AlN-based piezoelectric sensors for pressure, temperature, and acoustic wave detection.

High-temperature electronics: growth of SiC-based power devices for high-temperature and high-power applications.

Product parameter of the MOCVD Epitaxial Susceptor for 4" Wafer

Physical properties of isostatic graphite
Property	Unit	Typical Value
Bulk Density	g/cm³	1.83
Hardness	HSD	58
Electrical Resistivity	μΩ.m	10
Flexural Strength	MPa	47
Compressive Strength	MPa	103
Tensile Strength	MPa	31
Young' s Modulus	GPa	11.8
Thermal Expansion(CTE)	10-6K-1	4.6
Thermal Conductivity	W·m-1·K-1	130
Average Grain Size	μm	8-10
Porosity	%	10
Ash Content	ppm	≤10 (after purified)

Note: Before coating, we will do first purification, after coating, will do second purification.

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1