VeTek Semiconductor is a professional manufacturer, supplier and exporter for the SiC coated graphite barrel susceptor for EPI. Supported by a professional team and leading technology, VeTek Semiconductor can provide you high quality at reasonable prices. we welcome you to visit our factory for further discussion.
VeTek Semiconductor is China manufacturer & supplier who mainly produces SiC coated graphite barrel susceptor for EPI with many years of experience. Hope to build business relationship with you. EPI (Epitaxy) is a critical process in the manufacturing of advanced semiconductors. It involves the deposition of thin layers of material on a substrate to create complex device structures. SiC coated graphite barrel susceptor for EPI are commonly used as susceptors in EPI reactors due to their excellent thermal conductivity and resistance to high temperatures. With CVD-SiC coating, it becomes more resistant to contamination, erosion, and thermal shock. This results in a longer lifespan for the susceptor and improved film quality.
Reduced Contamination: SiC's inert nature prevents impurities from adhering to the susceptor surface, reducing the risk of contamination of the deposited films.
Increased Erosion Resistance: SiC is significantly more resistant to erosion than conventional graphite, leading to a longer lifespan for the susceptor.
Improved Thermal Stability: SiC has excellent thermal conductivity and can withstand high temperatures without significant distortion.
Enhanced Film Quality: The improved thermal stability and reduced contamination result in higher-quality deposited films with improved uniformity and thickness control.
SiC coated graphite barrel susceptors are widely used in various EPI applications, including:
GaN-based LEDs
Power electronics
Optoelectronic devices
High-frequency transistors
Sensors
Physical properties of isostatic graphite | ||
Property | Unit | Typical Value |
Bulk Density | g/cm³ | 1.83 |
Hardness | HSD | 58 |
Electrical Resistivity | μΩ.m | 10 |
Flexural Strength | MPa | 47 |
Compressive Strength | MPa | 103 |
Tensile Strength | MPa | 31 |
Young' s Modulus | GPa | 11.8 |
Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
Thermal Conductivity | W·m-1·K-1 | 130 |
Average Grain Size | μm | 8-10 |
Porosity | % | 10 |
Ash Content | ppm | ≤10 (after purified) |
Note: Before coating, we will do first purification, after coating, will do second purification.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |