Disc Susceptor

Vetek Semiconductor's Graphite Disc Susceptor, a high-performance product for advanced semiconductor manufacturing processes. Our graphite disc susceptor is designed to meet the demanding requirements of the industry and provide exceptional performance and reliability.

This Graphite Disc Susceptor is OEM for AIX G5 planetary reactor platform.

GaN-on-Si MOCVD is used for LED epitaxial production, and the Aixtron G5 reactor improves the yield and uniformity of the MOCVD platform. A fully rotated symmetrical uniform pattern on five 200mm wafers, using a standard thickness silicon substrate and controlling wafer bending behavior formalized what they needed for silicon fabrication.

Vetek Semiconductor's High-Purity Graphite Disc Susceptor for GaN-on-Si MOCVD, a reliable and cost-effective solution for advanced semiconductor manufacturing processes.

Our high-purity graphite disc susceptor is specifically designed to meet the requirements of GaN-on-Si MOCVD processes. With its exceptional thermal stability and heat resistance, it can withstand the demanding temperature conditions typically ranging from 800°C to 1100°C, ensuring optimal performance during the deposition process.

The high-purity graphite material used in our disc susceptor provides excellent chemical resistance, making it compatible with the ammonia (NH3) and organic metal precursors commonly used in GaN-on-Si MOCVD. This eliminates the need for additional SiC coatings, reducing production costs without compromising performance.

Vetek Semiconductor's high-purity graphite disc susceptor offers a cost-effective solution without compromising on quality. Its reliability, durability, and compatibility with GaN-on-Si MOCVD processes make it the preferred choice for semiconductor manufacturers. Trust Vetek Semiconductor to deliver high-performance graphite disc susceptors for your GaN-on-Si MOCVD manufacturing needs.

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Overview of the semiconductor chip epitaxy industry chain: