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    • China cover ring Manufacturer, Supplier, Factory

    As a professional cover ring manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable cover ring made in China, you can leave us a message.

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    • SiC Coated Silicon Carbide Wafer Boat

      SiC Coated Silicon Carbide Wafer Boat

      VeTek Semiconductor is professional manufacturer and supplier in China for SiC coated silicon carbide wafer boat, with years of experience in R&D and production, can control the quality well and offer a competitive price. Welcome for visiting our factory and have further discussion on cooperation.
    • Pyrolytic Graphite Coated Graphite Elements

      Pyrolytic Graphite Coated Graphite Elements

      VeTek Semiconductor is a leading supplier of customized Pyrolytic Graphite Coated graphite Elements in China, specializing in advanced materials for many years. Our Pyrolytic Carbon Coated Graphite Parts have dense surfaces and no pores. High purity, high temperature resistance, good chemical stability are the characristic of our PyC coating. Welcome to establish long-term cooperation with us.
    • Tantalum Carbide Coated Halfmoon Part for LPE

      Tantalum Carbide Coated Halfmoon Part for LPE

      VeTek Semiconductor is a large-scale Tantalum Carbide Coated Halfmoon Part for LPE manufacturer and innovator in China.We have been specialized in TaC coating for many years.Our products can withstand temperatures above 2000 degrees Celsius, prolong the lifespan of consumables.We look forward to becoming your long-term partner in China.
    • Ultra Pure Silicon Carbide Powder for Crystal Growth

      Ultra Pure Silicon Carbide Powder for Crystal Growth

      VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Ultra Pure Silicon Carbide Powder for Crystal Growth. With a purity of up to 99.999% wt and extremely low impurity levels of nitrogen, boron, aluminum, and other contaminants, it is specifically designed to enhance the semi-insulating properties of high-purity silicon carbide. Welcome to inquire and cooperate with us!
    • 4H N-type SiC Substrate

      4H N-type SiC Substrate

      As a professional 4H N-type SiC Substrate manufacturer and supplier in China, Vetek Semiconductor 4H N-type SiC Substrate aims to provide advanced technology and product solutions for the semiconductor industry. Our 4H N-type SiC Wafer is carefully designed and manufactured with high reliability to meet the demanding requirements of the semiconductor industry. We welcome your further inquiries.
    • CVD SiC Graphite Cylinder

      CVD SiC Graphite Cylinder

      Vetek Semiconductor’s CVD SiC Graphite Cylinder is pivotal in semiconductor equipment, serving as a protective shield within reactors to safeguard internal components in high temperature and pressure settings. It effectively shields against chemicals and extreme heat, preserving equipment integrity. With exceptional wear and corrosion resistance, it ensures longevity and stability in challenging environments. Utilizing these covers enhances semiconductor device performance, prolongs lifespan, and mitigates maintenance requirements and damage risks.Welcome to inquiry us.
    • Related Blog
    • Reviews

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

    • Italy's LPE's 200mm SiC epitaxial technology progress

      This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Uses of solid silicon carbide

      Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

    • What’s the difference between Silicon Carbide and Tantalum Carbide Coatings?

      This article analyzes the product characteristics and application scenarios of tantalum carbide coating and silicon carbide coating from multiple perspectives.

    • A complete explanation of the chip manufacturing process (1/2): from wafer to packaging and testing

      The semiconductor manufacturing process involves eight steps: wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Silicon from sand is processed into wafers, oxidized, patterned, and etched for high-precision circuits.

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