MOCVD SiC coating susceptor

VeTek Semiconductor MOCVD SiC Coating Susceptor is made of high-quality graphite, which is selected for its thermal stability and excellent thermal conductivity (about 120-150 W/m·K). The inherent properties of graphite make it an ideal material to withstand the harsh conditions inside MOCVD reactors. To improve its performance and extend its service life, the graphite susceptor is carefully coated with a layer of silicon carbide (SiC).

MOCVD SiC Coating Susceptor is a key component used in chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD) processes. Its main function is to support and heat silicon or silicon carbide (SiC) wafers and ensure uniform gas deposition in a high temperature environment. It is an indispensable product in semiconductor processing.

Applications of MOCVD SiC coating susceptor in semiconductor processing:

Wafer support and heating:

MOCVD SiC coating susceptor not only has a powerful support function, but also can effectively heat the wafer evenly to ensure the stability of the chemical vapor deposition process. During the deposition process, the high thermal conductivity of the SiC coating can quickly transfer heat energy to every area of the wafer, avoiding local overheating or insufficient temperature, thereby ensuring that the chemical gas can be evenly deposited on the wafer surface. This uniform heating and deposition effect greatly improves the consistency of wafer processing, making the surface film thickness of each wafer uniform and reducing the defect rate, further improving the production yield and performance reliability of semiconductor devices.

Epitaxy Growth:

In the MOCVD process, SiC coated carriers are key components in the epitaxy growth process. They are specifically used to support and heat silicon and silicon carbide wafers, ensuring that materials in the chemical vapor phase can be uniformly and accurately deposited on the wafer surface, thereby forming high-quality, defect-free thin film structures. SiC coatings are not only resistant to high temperatures, but also maintain chemical stability in complex process environments to avoid contamination and corrosion. Therefore, SiC coated carriers play a vital role in the epitaxy growth process of high-precision semiconductor devices such as SiC power devices (such as SiC MOSFETs and diodes), LEDs (especially blue and ultraviolet LEDs), and photovoltaic solar cells.

Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Epitaxy:

SiC coated carriers are an indispensable choice for the growth of GaN and GaAs epitaxial layers due to their excellent thermal conductivity and low thermal expansion coefficient. Their efficient thermal conductivity can evenly distribute heat during epitaxial growth, ensuring that each layer of deposited material can grow uniformly at a controlled temperature. At the same time, SiC's low thermal expansion allows it to remain dimensionally stable under extreme temperature changes, effectively reducing the risk of wafer deformation, thereby ensuring the high quality and consistency of the epitaxial layer. This feature makes SiC-coated carriers an ideal choice for manufacturing high-frequency, high-power electronic devices (such as GaN HEMT devices) and optical communications and optoelectronic devices (such as GaAs-based lasers and detectors).

VeTek Semiconductor MOCVD SiC coating susceptor shops: