PSS Etching Carrier Plate for Semiconductor

VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a high-quality, ultra-pure graphite carrier designed for wafer handling processes. Our carriers have excellent performance and can perform well in harsh environments, high temperatures and harsh chemical cleaning conditions. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.

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Product Description

As the professional manufacturer, we would like to provide you high quality PSS Etching Carrier Plate for Semiconductor. VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a specialized component used in the semiconductor industry for the process of Plasma Source Spectroscopy (PSS) etching. This plate plays a crucial role in supporting and carrying the semiconductor wafers during the etching process.Welcome to inquiry us!

Key Features:

Precision Design: The carrier plate is engineered with precise dimensions and surface flatness to ensure uniform and consistent etching across the semiconductor wafers. It provides a stable and controlled platform for the wafers, allowing for accurate and reliable etching results.

Plasma Resistance: The carrier plate exhibits excellent resistance to the plasma used in the etching process. It remains unaffected by the reactive gases and high-energy plasma, ensuring prolonged service life and consistent performance.

Thermal Conductivity: The carrier plate features high thermal conductivity to efficiently dissipate heat generated during the etching process. This helps in maintaining optimal temperature control and prevents overheating of the semiconductor wafers.

Compatibility: The PSS Etching Carrier Plate is designed to be compatible with various semiconductor wafer sizes commonly used in the industry, ensuring versatility and ease of use across different manufacturing processes.

Product parameter of the PSS Etching Carrier Plate for Semiconductor

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1