China Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite Manufacturer, Supplier, Factory

Tantalum Carbide Coating

VeTek semiconductor is a leading manufacturer of Tantalum Carbide Coating materials for the semiconductor industry. Our main product offerings include CVD tantalum carbide coating parts, sintered TaC coating parts for SiC crystal growth or semiconductor epitaxy process. Passed ISO9001, VeTek Semiconductor has good control on quality. VeTek Semiconductor is dedicated to become innovator in Tantalum Carbide Coating industry through ongoing research and development of iterative technologies.

The main products are Tantalum Carbide coating defector ring, TaC coated diversion ring, TaC coated halfmoon parts, Tantalum Carbide Coated Planetary Rotation Disk (Aixtron G10) , TaC Coated Crucible; TaC Coated Rings; TaC Coated Porous Graphite; Tantalum Carbide Coating Graphite Susceptor; TaC Coated Guide Ring; TaC Tantalum Carbide Coated Plate; TaC Coated Wafer Susceptor; TaC Coating Ring; TaC Coating Graphite Cover; TaC Coated Chunk etc., the purity is below 5ppm, can meet customer requirements.

TaC coating graphite is created by coating the surface of a high-purity graphite substrate with a fine layer of tantalum carbide by a proprietary Chemical Vapor Deposition (CVD) process.The advantage is showed in below picture:

Performance Advantages of Tantalum Carbide Coating

The tantalum carbide (TaC) coating has gained attention due to its high melting point of up to 3880°C, excellent mechanical strength, hardness, and resistance to thermal shocks, making it an attractive alternative to compound semiconductor epitaxy processes with higher temperature requirements, such as Aixtron MOCVD system and LPE SiC epitaxy process.It also has a wide application in PVT method SiC crystal growth process.

Key Features:

Temperature stability

Ultra high purity

Resistance to H2, NH3, SiH4,Si

Resistance to thermal stock

Strong adhesion to graphite

Conformal coating coverage

Size up to 750 mm diameter(The only manufacturer in China reaches this size)

Applications:

Wafer carrier

Inductive heating susceptor

Resistive heating element

Satellite disk

Showerhead

Guide ring

LED Epi susceptor

Injection nozzle

Masking ring

Heat shield

Tantalum carbide (TaC) coating on a microscopic cross-section:

Tantalum carbide (TaC) coating on a microscopic cross-section

Parameter of VeTek Semiconductor Tantalum Carbide Coating:

Physical properties of TaC coating
Density	14.3 (g/cm³)
Specific emissivity	0.3
Thermal expansion coefficient	6.3 10^-6/K
Hardness (HK)	2000 HK
Resistance	1×10^-5 Ohm*cm
Thermal stability	<2500℃
Graphite size changes	-10~-20um
Coating thickness	≥20um typical value (35um±10um)

TaC coating EDX data：

TaC coating EDX data

TaC coating crystal structure data

Element	Atomic percent
	Pt. 1	Pt. 2	Pt. 3	Average
C K	52.10	57.41	52.37	53.96
Ta M	47.90	42.59	47.63	46.04

TaC Coating Chuck TaC Coating Planetary Disk TaC Coated Plate TaC Coating Rotation Plate TaC coating susceptor CVD TaC coating Cover CVD TaC Coating Ring TaC Coating Plate

Silicon Carbide Coating

VeTek Semiconductor specializes in the production of ultra pure Silicon Carbide Coating products, these coatings are designed to be applied to purified graphite, ceramics, and refractory metal components.

Our high purity coatings are primarily targeted for use in the semiconductor and electronics industries. They serve as a protective layer for wafer carriers, susceptors, and heating elements, safeguarding them from corrosive and reactive environments encountered in processes such as MOCVD and EPI. These processes are integral to wafer processing and device manufacturing. Additionally, our coatings are well-suited for applications in vacuum furnaces and sample heating, where high vacuum, reactive, and oxygen environments are encountered.

At VeTek Semiconductor, we offer a comprehensive solution with our advanced machine shop capabilities. This enables us to manufacture the base components using graphite, ceramics, or refractory metals and apply the SiC or TaC ceramic coatings in-house. We also provide coating services for customer-supplied parts, ensuring flexibility to meet diverse needs.

Our Silicon Carbide Coating products are widely used in Si epitaxy, SiC epitaxy, MOCVD system, RTP/RTA process, etching process, ICP/PSS etching process, process of various LED types, including blue and green LED, UV LED and deep-UV LED etc.,which is adapted to equipment from LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI and so on.

Reactor parts we can do:

Silicon Carbide Coating several unique advantages:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1

SEM data and structure of CVD SIC films

Wafer

Wafer Substrate is a wafer made of semiconductor single crystal material. The substrate can directly enter the wafer manufacturing process to produce semiconductor devices, or it can be processed by epitaxial process to produce epitaxial wafers.

Wafer Substrate, as the basic supporting structure of semiconductor devices, directly affects the performance and stability of the devices. As the "foundation" for semiconductor device manufacturing, a series of manufacturing processes such as thin film growth and lithography need to be carried out on the substrate.

Summary of substrate types:

1. Single crystal silicon wafer: currently the most common substrate material, widely used in the manufacture of integrated circuits (ICs), microprocessors, memories, MEMS devices, power devices, etc.;

2. SOI substrate: used for high-performance, low-power integrated circuits, such as high-frequency analog and digital circuits, RF devices and power management chips;

3. Compound semiconductor substrates: Gallium arsenide substrate (GaAs): microwave and millimeter wave communication devices, etc. Gallium nitride substrate (GaN): used for RF power amplifiers, HEMT, etc. Silicon carbide substrate (SiC): used for electric vehicles, power converters and other power devices Indium phosphide substrate (InP): used for lasers, photodetectors, etc.;

4. Sapphire substrate: used for LED manufacturing, RFIC (radio frequency integrated circuit), etc.;

Vetek Semiconductor is a professional SiC Substrate and SOI substrate supplier in China. Our 4H semi-insulating type SiC substrate and 4H Semi Insulating Type SiC Substrate are widely used in key components of semiconductor manufacturing equipment.

Vetek Semiconductor is committed to providing advanced and customizable Wafer Substrate products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.

ALD

Thin film preparation processes can be divided into two categories according to their film forming methods: physical vapor deposition (PVD) and chemical vapor deposition (CVD), of which CVD process equipment accounts for a higher proportion. Atomic layer deposition (ALD) is one of the chemical vapor deposition (CVD).

Atomic layer deposition technology (Atomic Layer Deposition, referred to as ALD) is a vacuum coating process that forms a thin film on the surface of a substrate layer by layer in the form of a single atomic layer. ALD technology is currently being widely adopted by the semiconductor industry.

Atomic layer deposition process:

Atomic layer deposition usually includes a cycle of 4 steps, which is repeated as many times as needed to achieve the required deposition thickness. The following is an example of ALD of Al₂O₃, using precursor substances such as Al(CH₃) (TMA) and O₂.

Step 1) Add TMA precursor vapor to the substrate, TMA will adsorb on the substrate surface and react with it. By selecting appropriate precursor substances and parameters, the reaction will be self-limiting.

Step 2) Remove all residual precursors and reaction products.

Step 3) Low-damage remote plasma irradiation of the surface with reactive oxygen radicals oxidizes the surface and removes surface ligands, a reaction that is also self-limiting due to the limited number of surface ligands.

Step 4) Reaction products are removed from the chamber.

Only step 3 differs between thermal and plasma processes, with H₂O being used in thermal processes and O₂ plasma being used in plasma processes. Since the ALD process deposits (sub)-inch-thick films per cycle, the deposition process can be controlled at the atomic scale.

1st Half-Cycle Purge 2nd Half-Cycle Purge

Highlights of Atomic Layer Deposition (ALD):

1) Grow high-quality thin films with extreme thickness accuracy, and only grow a single atomic layer at a time

2) Wafer thickness can reach 200 mm, with typical uniformity <±2%

3) Excellent step coverage even in high aspect ratio structures

4) Highly fitted coverage

5) Low pinhole and particle levels

6) Low damage and low temperature process

7) Reduce nucleation delay

8) Applicable to a variety of materials and processes

Compared with traditional chemical vapor deposition (CVD) and physical vapor deposition (PVD), the advantages of ALD are excellent three-dimensional conformality, large-area film uniformity, and precise thickness control, etc. It is suitable for growing ultra-thin films on complex surface shapes and high aspect ratio structures. Therefore, it is widely applicable to substrates of different shapes and does not require control of reactant flow uniformity.

Comparison of the advantages and disadvantages of PVD technology, CVD technology and ALD technology:

PVD technology	CVD technology	ALD technology
Faster deposition rate	Average deposition rate	Slower deposition rate
Thicker film thickness, poor control of nano-level film thickness precision	Medium film thickness (depends on the number of reaction cycles)	Atomic-level film thickness
The coating has a single directionality	The coating has a single directionality	Good uniformity of large-area film thickness
Poor thickness uniformity	Average step coverage	Best step coverage
Poor step coverage	\	Dense film without pinholes

Advantages of ALD technology compared to CVD technology (Source: ASM)

Vetek Semiconductor is a professional ALD Susceptor products supplier in China. Our ALD Susceptor, SiC coating ALD susceptor and ALD Planetary Susceptor are widely used in key components of semiconductor manufacturing equipment. Vetek Semiconductor is committed to providing advanced and customizable ALD Susceptor products and technical solutions of various specifications for the semiconductor industry. We sincerely look forward to becoming your supplier in China.