GaN Epitaxy susceptor

GaN epitaxy is an advanced semiconductor manufacturing technology used to produce high-performance electronic and optoelectronic devices. According to different substrate materials, GaN epitaxial wafers can be divided into GaN-based GaN, SiC-based GaN, Sapphire-based GaN and GaN-on-Si.

       Simplified schematic of the MOCVD process to generate GaN epitaxy

In the production of GaN epitaxy, the substrate cannot be simply placed somewhere for epitaxial deposition, because it involves various factors such as gas flow direction , temperature, pressure, fixation, and falling contaminants. Therefore, a base is needed, and then the substrate is placed on the disk, and then epitaxial deposition is performed on the substrate using CVD technology. This base is the GaN Epitaxy susceptor.

The lattice mismatch between SiC and GaN is small because the thermal conductivity of SiC is much higher than that of GaN, Si and sapphire. Therefore, regardless of the substrate GaN epitaxial wafer, GaN Epitaxy susceptor with SiC coating can significantly improve the thermal characteristics of the device and reduce the junction temperature of the device.

Lattice mismatch and thermal mismatch relationships of materials

The GaN Epitaxy susceptor manufactured by VeTek Semiconductor has the following characteristics:

Material: The susceptor is made of high-purity graphite and a SiC coating, which enables the GaN Epitaxy susceptor to withstand high temperatures and provide excellent stability during epitaxial manufacturing.VeTek Semiconductor’s GaN Epitaxy susceptor can achieve a purity of 99.9999% and impurity content less than 5ppm.

Thermal conductivity: Good thermal performance enables precise temperature control, and the good thermal conductivity of the GaN Epitaxy susceptor ensures uniform deposition of GaN epitaxy.

Chemical stability: The SiC coating prevents contamination and corrosion, so the GaN Epitaxy susceptor can withstand the harsh chemical environment of the MOCVD system and ensure normal production of GaN epitaxy.

Design: Structural design is carried out according to customer needs, such as barrel-shaped or pancake-shaped susceptors. Different structures are optimized for different epitaxial growth technologies to ensure better wafer yield and layer uniformity.

Whatever your need for GaN Epitaxy susceptor, VeTek Semiconductor can provide you with the best products and solutions. Looking forward to your consultation at any time.

Basic physical properties of CVD SiC coating:

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