SiC coating ALD susceptor

VeTek Semiconductor SiC coating ALD susceptor plays a vital role in the atomic layer deposition (ALD) process. Its precise temperature control, uniform gas distribution, high chemical resistance and excellent thermal conductivity ensure the uniformity and high quality of the film deposition process. If you want to know more, you can consult us immediately and we will reply you in time!

Precise temperature control:

SiC coating ALD susceptor usually has a high-precision temperature control system. It is able to maintain a uniform temperature environment throughout the deposition process, which is crucial to ensure the uniformity and quality of the film.

Uniform gas distribution:

The optimized design of SiC coating ALD susceptor ensures the uniform distribution of gas during the ALD deposition process. Its structure usually includes multiple rotating or moving parts to promote uniform coverage of reactive gases across the entire wafer surface.

High chemical resistance:

Since the ALD process involves a variety of chemical gases, SiC coating ALD susceptor is usually made of corrosion-resistant materials (such as platinum, ceramics or high-purity quartz) to resist the erosion of chemical gases and the influence of high temperature environments.

Excellent thermal conductivity:

In order to effectively conduct heat and maintain a stable deposition temperature, SiC coating ALD susceptors usually use high thermal conductivity materials. This helps avoid local overheating and uneven deposition.

Basic physical properties of CVD SiC coating:

Production shops:

Overview of the semiconductor chip epitaxy industry chain：