As a professional Aixtron Satellite Wafer Carrier product manufacturer and innovator in China, VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes in semiconductor processing, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
Aixtron Satellite Wafer Carrier is an integral part of AIXTRON MOCVD equipment, specially used to carry wafers for epitaxial growth. It is particularly suitable for the epitaxial growth process of GaN and silicon carbide (SiC) devices. Its unique "satellite" design not only ensures the uniformity of gas flow, but also improves the uniformity of film deposition on the wafer surface.
Aixtron's wafer carriers are usually made of silicon carbide (SiC) or CVD-coated graphite. Among them, silicon carbide (SiC) has excellent thermal conductivity, high temperature resistance and low thermal expansion coefficient. CVD coated graphite is graphite coated with a silicon carbide film through a chemical vapor deposition (CVD) process, which can enhance its corrosion resistance and mechanical strength. SiC and coated graphite materials can withstand temperatures up to 1,400°C–1,600°C and have excellent thermal stability at high temperatures, which is critical for the epitaxial growth process.
Aixtron Satellite Wafer Carrier is mainly used to carry and rotate wafers in the MOCVD process to ensure uniform gas flow and uniform deposition during epitaxial growth. The specific functions are as follows:
Wafer rotation and uniform deposition: Through the rotation of the Aixtron Satellite Carrier, the wafer can maintain stable movement during epitaxial growth, allowing gas to flow evenly over the wafer surface to ensure uniform deposition of materials.
High temperature bearing and stability: Silicon carbide or coated graphite materials can withstand temperatures up to 1,400°C–1,600°C. This feature ensures that the wafer will not deform during high-temperature epitaxial growth, while preventing the thermal expansion of the carrier itself from affecting the epitaxial process.
Reduced particle generation: High-quality carrier materials (such as SiC) have smooth surfaces that reduce particle generation during vapor deposition, thereby minimizing the possibility of contamination, which is critical for producing high-purity, high-quality semiconductor materials.
VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is available in 100mm, 150mm, 200mm and even larger wafer sizes, and can provide customized product services based on your equipment and process requirements. We sincerely hope to be your long-term partner in China.