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    • China Silicon Carbide Wafer Chuck Manufacturer, Supplier, Factory

    As a professional Silicon Carbide Wafer Chuck manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Silicon Carbide Wafer Chuck made in China, you can leave us a message.

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    • EPI susceptor

      EPI susceptor

      VeTek Semiconductor's EPI susceptor is designed for the demanding epitaxial equipment applications. Its high-purity silicon carbide (SiC) coated graphite structure offers excellent heat resistance, uniform thermal uniformity for consistent epitaxial layer thickness and resistance, and long-lasting chemical resistance. We look forward to cooperating with you.
    • Solid SiC Etching Focusing Ring

      Solid SiC Etching Focusing Ring

      VeTek Semiconductor is a leading Solid SiC Etching Focusing Ring manufacturer and innovator in China.We have been specialized in SiC material for many years.Solid SiC is chosen as a focusing ring material due to its excellent thermochemical stability, high mechanical strength and resistance to plasma erosion.We look forward to becoming your long-term partner in China.
    • TaC Coating Heater

      TaC Coating Heater

      VeTek Semiconductor is a leading manufacturer and innovator of TaC Coating Heater in China. This product has an extremely high melting point (about 3880°C). The high melting point of TaC Coating Heater enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing advanced technology and product solutions for the semiconductor industry. We look forward to becoming your long-term partner in China.
    • TaC Coated Three-petal Ring

      TaC Coated Three-petal Ring

      VeTek Semiconductor is a leading TaC Coated Three-petal Ring manufacturer and innovator in China.We have been specialized in TaC and SiC coating for many years.Our products have a corrosion resistance, high strength. We look forward to becoming your long-term partner in China.
    • TaC Coated Deflector Ring

      TaC Coated Deflector Ring

      VeTek Semiconductor's TaC Coated Deflector Ring is a highly specialized component designed for SiC crystal growth processes. The TaC coating provides excellent high temperature resistance and chemical inertness to cope with the high temperatures and corrosive environments during crystal growth process. This ensures stable performance and long life of the component, reducing the frequency of replacement and downtime. We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
    • Pull Silicon Single Crystal Jig

      Pull Silicon Single Crystal Jig

      VeTek Semiconductor’s Pull Silicon Single Crystal Jig are designed to ensure the purity of wafers and precise control of hot zones during crystallization, offering sustainable and efficient solutions for thephotovoltaic industry.Looking forward to setting long-term cooperation.
    • Related Blog
    • Reviews

    • How to prepare CVD TaC coating?

      This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

    • 8-inch SiC epitaxial furnace and homoepitaxial process research

      8-inch SiC epitaxial furnace and homoepitaxial process research

    • Different technical routes of SiC epitaxial growth furnace

      Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

    • Based on 8-inch silicon carbide single crystal growth furnace technology

      Silicon carbide is one of the ideal materials for making high-temperature, high-frequency, high-power and high-voltage devices. In order to improve production efficiency and reduce costs, the preparation of large-size silicon carbide substrates is an important development direction.

    • Uses of solid silicon carbide

      Solid silicon carbide has excellent properties such as high temperature stability, high hardness, good abrasion resistance, and good chemical stability, so it has a wide range of applications. The following are some applications of solid silicon carbide:

    • What is the difference between epitaxy and ALD?

      The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

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