Vetek Semiconductor excels in collaborating closely with clients to craft bespoke designs for SiC Coating Inlet Ring tailored to specific needs. These SiC Coating Inlet Ring are meticulously engineered for diverse applications such as CVD SiC equipment and Silicon carbide epitaxy. For tailored SiC Coating Inlet Ring solutions, do not hesitate to reach out to Vetek Semiconductor for personalized assistance.
High quality SiC Coating Inlet Ring is offered by China manufacturer Vetek Semiconductor. Buy SiC Coating Inlet Ring which is of high quality directly with low price.
Vetek Semiconductor specializes in supplying advanced and competitive production equipment tailored for the semiconductor industry, focusing on SiC-coated graphite components like SiC Coating Inlet Ring for third-generation SiC-CVD systems. These systems facilitate the growth of uniform single crystal epitaxial layers on silicon carbide substrates, essential for manufacturing power devices such as Schottky diodes, IGBTs, MOSFETs, and various electronic components.
The SiC-CVD equipment merges process and equipment seamlessly, offering notable advantages in high production capacity, compatibility with 6/8-inch wafers, cost efficiency, continuous automatic growth control across multiple furnaces, low defect rates, and convenient maintenance and reliability through temperature and flow field control designs. When paired with our SiC Coating Inlet Ring, it enhances equipment productivity, prolongs operational lifespan, and effectively manages costs.
Vetek Semiconductor's SiC Coating Inlet Ring are characterized by high purity, stable graphite properties, precise processing, and the added benefit of CVD SiC coating. The high temperature stability of silicon carbide coatings shields substrates from heat and chemical corrosion in extreme environments. These coatings also offer high hardness and wear resistance, ensuring extended substrate lifespan, corrosion resistance against various chemicals, low friction coefficients for reduced losses, and improved thermal conductivity for efficient heat dissipation. Overall, CVD silicon carbide coatings provide comprehensive protection, extending substrate lifespan and enhancing performance.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |