CVD SiC Block for SiC Crystal Growth

VeTek Semiconductor uses discarded CVD SiC Block for SiC Crystal Growth. Ultra-high purity silicon carbide (SiC) produced through chemical vapor deposition (CVD) can be used as a source material for growing SiC crystals via physical vapor transport (PVT).

VeTek Semiconductor specializes in large-particle SiC for PVT, which has higher density compared to small-particle material formed by spontaneous combustion of Si and C-containing gases. Unlike solid-phase sintering or the reaction of Si and C, PVT does not require a dedicated sintering furnace or time-consuming sintering step in the growth furnace.

Currently, rapid growth of SiC is typically achieved through high-temperature chemical vapor deposition (HTCVD), but it has not been used for large-scale SiC production and further research is needed. VeTek Semiconductor successfully demonstrated the PVT method for rapid SiC crystal growth under high-temperature gradient conditions using crushed CVD-SiC Blocks for SiC Crystal Growth.

SiC is a wide bandgap semiconductor with excellent properties, in high demand for high-voltage, high-power, and high-frequency applications, especially in power semiconductors. SiC crystals are grown using the PVT method at a relatively slow growth rate of 0.3 to 0.8 mm/h to control crystallinity. Rapid growth of SiC has been challenging due to quality issues such as carbon inclusions, purity degradation, polycrystalline growth, grain boundary formation, and defects like dislocations and porosity, limiting the productivity of SiC substrates.

CVD SIC FILM CRYSTAL STRUCTURE:

Basic physical properties of CVD SiC coating: