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China SiC Epitaxy Wafer Carrier Manufacturer, Supplier, Factory

As a professional SiC Epitaxy Wafer Carrier manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable SiC Epitaxy Wafer Carrier made in China, you can leave us a message.

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    High Purity Porous Graphite provided by VeTek Semiconductor is an advanced semiconductor processing material. It is made of high-purity carbon material with excellent thermal conductivity, good chemical stability and excellent mechanical strength. This High Purity Porous Graphite plays an important role in the growth process of single crystal SiC. VeTek Semiconductor is committed to providing quality products at competitive prices and looks forward to becoming your long-term partner in China.
  • TaC Coating Planetary Susceptor

    TaC Coating Planetary Susceptor

    VeTek Semiconductor'TaC Coating Planetary Susceptor is an exceptional product for Aixtron epitaxy equipment. The robust TaC coating provides excellent high-temperature resistance and chemical inertness. This unique combination ensures reliable performance and long service life, even in demanding environments. VeTek is committed to providing high-quality products and serving as a long-term partner in the Chinese market with competitive pricing.
  • Tantalum Carbide Coated Tube for Crystal Growth

    Tantalum Carbide Coated Tube for Crystal Growth

    VeTek Semiconductor is a leading Tantalum Carbide Coated Tube for Crystal Growth manufacturer and innovator in China.We have been specialized in ceramic coating for many years.Our products have a high purity and high temperature resistance.We look forward to becoming your long-term partner in China.
  • Silicon Carbide Seal Ring

    Silicon Carbide Seal Ring

    As a professional Silicon Carbide Seal Ring product manufacturer and factory in China, VeTek Semiconductor Silicon Carbide Seal Ring is widely used in semiconductor processing equipment due to its excellent heat resistance, corrosion resistance, mechanical strength and thermal conductivity. It is especially suitable for processes involving high temperature and reactive gases such as CVD, PVD and plasma etching, and is a key material choice in the semiconductor manufacturing process. Your further inquiries are welcome.
  • High Purity Graphite Paper

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    The high purity graphite paper provided by VeTek Semiconductor is a reliable and efficient sealing solution. High-purity graphite paper is a sealing material made of advanced graphite materials with excellent performance and reliability. It has excellent high-temperature resistance and can withstand sealing requirements under extreme temperature conditions. We look forward to becoming your long-term partner in China.
  • GaN on SiC epi susceptor

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  • Reviews

  • What is CVD TAC Coating? - Veteksemi

    CVD TAC coating is a process for forming a dense and durable coating on a substrate (graphite). This method involves depositing TaC onto the substrate surface at high temperatures, resulting in a tantalum carbide (TaC) coating with excellent thermal stability and chemical resistance.

  • Why does SiC coating receive so much attention? - VeTek Semiconductor

    SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • 8-inch SiC epitaxial furnace and homoepitaxial process research

    8-inch SiC epitaxial furnace and homoepitaxial process research

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Porous Tantalum Carbide: A new generation of materials for SiC crystal growth

    VeTek Semiconductor's Porous Tantalum Carbide, as a new generation of SiC crystal growth material, has many excellent product properties and plays a key role in a variety of semiconductor processing technologies.

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